CMLT3904E Search Results

NPN PNP sot-563

Abstract: l04 ic code marking code L06 CMLT3904E CMLT3906E CMLT3946E X10-4 marking L04
Contextual Info: Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP TM Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT3904E two single NPN , CMLT3906E (two single PNP), and CMLT3946E (one

c4g TRANSISTOR

Abstract: CMLT3906EG NPN/PNP transistor transistor C4G CMLT3904E CMLT3906E CMLT3946E marking l04 transistor L46 CMLT3946EG
Contextual Info: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP

l04 ic code

Abstract: marking code L06 marking L06 CMLT3906E CMLT3946 marking l04
Contextual Info: Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT3904E two single NPN , CMLT3906E (two single PNP), and CMLT3946E (one each NPN and PNP

Contextual Info: Central" CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENH ANCED SPEC IFIC A T IO N COMPLEMENTARY PICOmini SILICON TRANSISTORS ENHANCED DESCRIPTION: The Central Semiconductor CMLT3904E two sin­ gle NPN , CMLT3906E (two single PNP), and

Contextual Info: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP

c4g TRANSISTOR

Abstract: transistor C4G CMLT3906EG X10-4 CMLT3904EG MARKING code 46g MARKING code 46g sot 563
Contextual Info: Central CMLT3904EG NPN CMLT3906EG PNP CMLT3946EG NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT3904EG two single NPN , CMLT3906EG (two single PNP), and CMLT3946EG (one each NPN and PNP complementary)

CMLT3906EG

Abstract: transistor C4G CMLT3904E CMLT3906E CMLT3946E marking L06
Contextual Info: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS SOT-563 CASE ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)

Contextual Info: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP

L04 MARKING

Abstract: CMLT3946E NPN PNP sot-563 L04 Transistor MARKING marking code RY SOT
Contextual Info: Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. EN H A N C E D SPECIFICATIO N COMPLEMENTARY PlCOmini SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT3904E two single NPN , CMLT3906E (two single PNP), and CMLT3946E (one each NPN and PNP complementa­

2N3904 die

Abstract: 2N3904 transistor data sheet free download transistor 2n3904 CXT3904 CZT3904 2N3904 2N3904 CENTRAL chip die npn transistor data sheet of NPN transistor 2N3904 equivalent al 2n3904
Contextual Info: PROCESS CP392V Central Smal Signal Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS

2N3904 die

Abstract: CXT3904 2N3904 2n3904 npn transistor CMKT3904 CZT3904 2N3904 equivalent 2n3904 npn 2N3904 NPN transistor datasheet 2N3904 geometry
Contextual Info: PROCESS CP192V Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

2N3904

Abstract: CZT3904 CXT3904 2N3904 die 2N3904 equivalent 2n3904 npn 2N3904 NPN transistor datasheet 2N3904 transistor data sheet free download chip die npn transistor CMLT3904E
Contextual Info: PROCESS CP192V Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization

2N3904

Abstract: CZT3904 2n3904 datasheet 2N3904 NPN Transistor CXT3904 2N3904 die CP392V equivalent al 2n3904 transistor NPN 2N3904 CMPT3904
Contextual Info: PROCESS CP392V Smal Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

PEMD4

Abstract: PEMD6 BC847BVN BC857BV PEMB4 CMLSH-4 PEMB10 ROHM SOT-563 BAS16V BAT54V
Contextual Info: New Product Announcement April 26, 2004 Introducing New Subminiature Device Series in SOT-563 Package A SOT-563 Dim B C A D G M K H L Min Max 0.15 0.30 Typ 0.25 1.10 1.25 1.20 B 1.55 1.70 1.60 C 0.50 D 0.90 1.10 1.00 G 1.50 1.70 1.60 H 0.56 0.60 0.60 K 0.10 0.30

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

transistor 3904

Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Contextual Info: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.

CP592

Abstract: cmhd3595 cmkt5088 PTA44 z2l4 ut3906 KT2907A KT2207 CMXDM7002A PT3904
Contextual Info: Characteristic Curve maex Central Part # Central Process# 2N7002 BAS56 BCX51 thru BCX53 BCX54 thru B CX56 BZX84C2V4 thru BZX84C6V2 BZX84C6V8 thru BZX84C51 CBCP68 CBCP69 CBCX68 CBCX69 CCLH M 080 thru CCLH M 150 CCLM 0035 thru CCLM 5750 C JD 31C CJD 32 C CJD 41 C

transistor sot datasheet

Abstract: SOT-563 sot 563 package SOT-523 BAS40V BAT54V MCC 25 2N7002V BAS16V BC847BV
Contextual Info: MCC MICRO COMMERCIAL COMPONENTS New Product Announcement Dec. 2004 Introducing New Subminiature Device Series in SOT-563 Package SOT-563 DIMENSIONS INCHES DIM A B C D G H K L M MIN .006 .043 .061 MM MAX .011 .049 .067 MIN 0.15 1.10 1.55 .043 .067 .023 .011

CMR1U-02M

Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836

2N3904

Abstract: 2n3904 npn transistor CXT3904 CZT3904 CMPT3904 2n3904 datasheet 2N3904 die 2N3904 equivalent CMKT3904 equivalent al 2n3904
Contextual Info: PROCESS CP392 Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization