NOBL Search Results

64KX32

Abstract: 7C1334-100 7C1334-133 7C1334-50 7C1334-80 CY7C1334
Contextual Info: fax id: 1084 CY7C1334 PRELIMINARY 64Kx32 Pipelined SRAM with NoBL Architecture Features • Low 16.5 mW standby power Functional Description • Pin compatible and functionally equivalent to ZBT™ device MT55L64L32P • Supports 133-MHz bus operations with zero wait states

CY7C1350

Abstract: IDT71V546 MCM63Z736
Contextual Info: fax id: 1103 CY7C1350 PRELIMINARY 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V546, MT55L128L36P and MCM63Z736 • Supports 143-MHz bus operations with zero wait

7C1351-40

Abstract: 7C1351-50 7C1351-66 CY7C1351 IDT71V547 MCM63Z737
Contextual Info: fax id: 1102 CY7C1351 PRELIMINARY 128Kx36 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V547, MT55L128L36F and MCM63Z737 • Supports 66-MHz bus operations with zero wait states

PHILIPS capacitors 0402

Abstract: F-103 Z capacitor
Contextual Info: Philips Components Product specification Surface mount ceramic multilayer capacitors FEATURES Class 1, NPO 50 V narrow tolerance series Noble Metal Electrode QUICK REFERENCE DATA • Four standard sizes DESCRIPTION VALUE • High capacitance per unit volume

Contextual Info: Philips Components Product specification Surface mount ceramic multilayer capacitors FEATURES Class 1, NPO 3 kV high voltage series Noble Metal Electrode QUICK REFERENCE DATA • Sizes 1808 and 1812 DESCRIPTION VALUE • High capacitance per unit volume Rated voltage U r DC

0805CG

Contextual Info: Philips Components Product specification Surface mount ceramic multilayer capacitors FEATURES • Low insertion loss/ESR up to 3 GHz: - First parallel resonance above 2 GHz - Second parallel resonance above 3 GHz Class 1, NP0 50 V microwave series Noble Metal Electrode

Contextual Info: CY7C1460AV25 CY7C1462AV25 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

CY7C1355C

Contextual Info: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead

CY7C1333

Contextual Info: CYPRESS _ CY7C1333 6~Kx3? Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic e M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes

Contextual Info: CY7C1352G 4-Mbit 256 K x 18 Pipelined SRAM with NoBL Architecture 4-Mbit (256 K × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

CY7C1352

Abstract: MCM63Z818 MCM63Z819
Contextual Info: 1CY7C1352 CY7C1352 256K x18 Pipelined SRAM with NoBL Architecture Features • Low standby power Functional Description • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z818 and MT55L256L18P • Supports 143-MHz bus operations with zero wait states

CY7C1352B-100AC

Abstract: cy7c1352b-166ac CY7C1352B MCM63Z818 MCM63Z819 1352B-2
Contextual Info: PRELIMINARY CY7C1352B 256K x18 Pipelined SRAM with NoBL Architecture • Low standby power Features Functional Description The CY7C1352B is a 3.3V 256K by 18 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of

pcb 10k potentiometer

Abstract: 10K20K XV081PH1N XV081PV1N Potentiometers 50k 2K POTENTIOMETER for pcb XV082
Contextual Info: Miniature Potentiometers XV081,XV082 FEATURES ¡ High performance miniature potentiometer created by incorporating NOBLE's ICB Integrated Control Block film integration technology. ¡ Ideally suited for Headphone stereos,and other pocketable audio equipment.

Contextual Info: fax id: 1084 W CYPRESS CY7C1334 PRELIMINARY 64Kx32 Pipelined SRAM with NoBL Architecture Features Functional Description • S u p p o rts 13 3 -M H z b u s o p e ratio n s w ith zero w ait sta tes— D ata is tra n s ferred on ev e ry clo ck T he C Y 7 C 1 334 is a 3.3V 64K by 32 syn ch ron ous-p ip eline d

Contextual Info: fax id: 1088 CY7C1333 ADVANCED INFORMATION 64Kx32 Flow-Through SRAM with NoBL Architecture Features Functional Description • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w ait sta tes— D ata is tra n s ferred on ev e ry clock • In te rn ally se lf-tim e d o u tp u t b u ffe r co n tro l to elim in a te

BB209

Abstract: CYM52KNP72V33A-10BBC CYM52KNP72V33A-13BBC CYM52KNP72V33A-15BBC
Contextual Info: PRELIMINARY CYM52KNP72AV33 512Kx72 Pipelined MCM with NoBL Architecture Features • No Bus Latency, no dead cycles between write and read cycles • Internally synchronized registered outputs eliminate the need to control OE • Single 3.3V –5% and +5% power supply VDD

Contextual Info: 9mm Size Snap-In Insulated Shaft Potentiometers FEATURES ●High performance miniature potentiometer created by incorporating NOBLE’s Film Integration Technology. ●Film element provides smooth rotational feeling. 20 8.3 1 3.8 9.85 5.5 7.6 0.5 0.3 7 6.2

CY7C1470BV33

Contextual Info: CY7C1470BV33 CY7C1472BV33 CY7C1474BV33 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

64K X 4 CACHE SRAM

Abstract: SRAM read/write circuit 64KX32 CY7C1333 CY7C1334 CY7C1350 CY7C1351 CY7C1352 CY7C1353 nobl sram
Contextual Info: fax id: 1503 NoBL: The Fast SRAM Architecture Introduction What is a NoBL? Processors in high performance PCs, workstations, communication equipment, and network applications demand high speed memories. The type of memory required is determined by the system architecture, the application and the processor

GS880Z18BT-150V

Abstract: GS880Z18BT-200V GS880Z18BT-250V GS880Z32BT-150V GS880Z32BT-200V GS880Z32BT-250V
Contextual Info: GS880Z18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

GS8162Z18B

Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

CY7C1354C

Abstract: CY7C1356C
Contextual Info: CY7C1354C CY7C1356C 9-Mbit 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture Functional Description[1] Features • Pin-compatible and functionally equivalent to ZBT™ • Supports 250-MHz bus operations with zero wait states — Available speed grades are 250, 200, and 166 MHz

GVT71256ZC36B-7.5

Abstract: CY7C1356A-100AC CY7C1356A GVT71512ZC18
Contextual Info: PRELIMINARY CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 200, 166, 133, and 100 MHz • Fast access time: 3.2, 3.6, 4.2, 5.0 ns

CY7C1357A

Abstract: GVT71512ZB18
Contextual Info: 1CY7C1357A PRELIMINARY CY7C1355A/GVT71256ZB36 CY7C1357A/GVT71512ZB18 256Kx36/512Kx18 Flow-Thru SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 133, 117, and 100 MHz • Fast access time: 6.5, 7.0, 7.5, and 8.0 ns