NMC214 Search Results

Contextual Info: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC5257A

Abstract: nmc2141
Contextual Info: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require

NMC2147HJ-1

Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
Contextual Info: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­

NMC2148

Abstract: NMC2148HJ NMC2148HJ-L NMC2148HJ-3 nmc2148h-2 NMC2148H pin diagram of 7404 NMC2148HJ-2 NMC2148HJ3 7404
Contextual Info: NMC2148H National ÉSà Semiconductor NMC2148H 1024 x 4-Bit Static RAM General Description Features The NMC2148H is a 1024-word by 4-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AH internal circuits are fully static and therefore re­

NMC2148

Abstract: nmc2148h
Contextual Info: NMC2148H O T National ÆM Semiconductor NMC2148H 1024 x 4-Bit Static RAM General Description Features The NMC2148H is a 1024-word by 4-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

J18A

Abstract: NMC2147H NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214
Contextual Info: NMC2147H yg\ National éüàSemiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC2142AJ

Abstract: NMC2142AN NMC2142APJ NMC2142APN MC2142
Contextual Info: NMC2142A, NMC2142AP National Semiconductor NMOSRAMs PREVIEW NMC2142A, NMC2142AP 4096-Bit 1024 x 4 Static RAMs General Description Features Thesfe1_024-word by ib ijf& tatic random a cc e ss memories are fabricated using N-channel s ilicon-gatejechnology.

NMC2147

Abstract: NMC2147H-2
Contextual Info: NMC2147H O T National ÆÂ Semiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MM5257-2L

Abstract: mm5257 MM2147 MM2147-3 NMC2141 S2147 MCM2147C-100 MCM2147C-55 MCM2147C-85 MCM6641
Contextual Info: 16 4 K nM C S ^ ft 3! * ! TMC max ns «•» TCAC max (ns) S t a t i c 1$ RAM ( 4 0 9 6 x 1) 13 P I N ft k TOE ■ toh , TOD ! T W p T 1 Ds T t d H T W D rain max rain max min , rain ' rain (ns) (ns) (ns) (ns) i (ns) (ns) (ns) TWB max (ns) V D D o r VCC j I DD

MN2114-2

Abstract: SY2114 Synertek MSM2114L-3RS MN2114-3 MSM2114LRS MSM2114L3RS SRM2114C-L7 SRM2114C-25 MSM2114L-2RS
Contextual Info: - 26 4 K A X m ît * € <X: TAAC max ns) TCAC •ax (ns) TOE max (ns) nMOS f- TOH min (ns) > S t a t i c T' f t RAM ( 1 0 2 4 x 4 ) ft t TOD max (ns) TWP min (ns) TDS ■in (ns) TDH min (ns) TWD min (ns) TWR max (ns) VDI) or V C C (V) 1 8 P I N A ü; I DD

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

DM85

Contextual Info: TTL l/O-MOS Static RAM Selection Guide Pins Access Time Temperature Range TS 16 50 — 55°C to + 125°C TS 16 30 — 55°C to + 1 25°C 1 6 x4 TS 16 35 0”C to +70°C DM74S189A 16x4 TS 16 25 0°C to + 70°C DM74S289 16 x4 OC 16 35 0°Cto + 70”C 93L415A