NMC5257A
Abstract: nmc2141
Contextual Info: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require
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nmc2141nmc5257a4096-word4096-bit |
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MM5257-2L
Abstract: mm5257 MM2147 MM2147-3 NMC2141 S2147 MCM2147C-100 MCM2147C-55 MCM2147C-85 MCM6641
Contextual Info: 16 4 K nM C S ^ ft 3! * ! TMC max ns «•» TCAC max (ns) S t a t i c 1$ RAM ( 4 0 9 6 x 1) 13 P I N ft k TOE ■ toh , TOD ! T W p T 1 Ds T t d H T W D rain max rain max min , rain ' rain (ns) (ns) (ns) (ns) i (ns) (ns) (ns) TWB max (ns) V D D o r VCC j I DD
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mcm6bl41-mcm66l41-45mcm2147c-100nmc2147h3l+13nmc5257as2147tmm31gdtmm315d-1tms21l47-7mm5257-2lmm5257mm2147mm2147-3nmc2141mcm2147c-55mcm2147c-85mcm6641
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401
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