NF TRANSISTOR ARRAY Search Results

lm314

Abstract: surface mount transistor A49 LM3146M lm3146n LM3146 10B4 diode KX 001 AN-450 C1995 DV10
Contextual Info: LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited

KA 2717

Abstract: MDC2125
Contextual Info: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to

cascode transistor array

Abstract: NTE917
Contextual Info: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise

a103g

Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
Contextual Info: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

Contextual Info: Pfitttl G £ C P L E S S E Y ADVANCE INFORMATION DS3628 • 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fr of 3GHz and wideband noise

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

Contextual Info: C PLESSEY Jpgtttt K mGEiuiiuinfim ii ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

AN5296 Application of the CA3018 Integrated

Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
Contextual Info: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

CA3054

Contextual Info: H A RR IS S E M I C O N D S E C T O R m U V blE D • 43 02 E7 1 O O H b ' m * A 'ìf ìR A HARRIS S E M I C O N D U C T O R March 1993 b41 H H A S Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Contextual Info: TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM • FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers Top View UPA103G 14 13 12 11 10 9 8 • OUTSTANDING hFE LINEARITY

4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:

SL3127

Abstract: CA3127 DS3628 SL3227 plessey SL3127
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The

c3346

Abstract: c3346 transistor nf transistor array MC3356P
Contextual Info: M M O T O R O L A - M C3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for

DARLINGTON TRANSISTOR ARRAY

Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed

DS3629

Abstract: MP14 SL3045 SL3145 SL3245
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated

DS3629

Abstract: SL3045 SL3245 transistor 3609 sl3145 MP14 GEC Plessey SL324
Contextual Info: DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The transistors exhibit typical fT of 3GHz and wideband noise

nec transistor

Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

A3054

Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed