NEC RF SWITCH Search Results

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

44-PIN

Abstract: UPB1009K VP215 6128MHZ
Contextual Info: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption

TC-8008

Abstract: 2SJ355 xz43
Contextual Info: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

NEC RF Switch CMOS

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT Double Pole Double Throw switch which is developed for mobile communications, wireless communications and another RF switching applications.

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. <R> This device can operate frequency from 0.01 to 2.0 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: package T6R
Contextual Info: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

marking 26 spdt sot363

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2408TB 0.05 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2408TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch for 2.4 GHz wireless LAN, mobile phone and other L, S-band applications. This device operates with dual control switching voltages of 2.5 to 5.3 V. This device can operate at frequencies

PG2409T6X

Abstract: PG2409T6X-E2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR Bluetooth TM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

SW SPDT 6pin

Abstract: HS350
Contextual Info: GaAs INTEGRATED CIRCUIT PG2415TK 0.5 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415TK is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.5 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 5.3 V. This device can operate at frequencies

12-PIN

Abstract: HS350
Contextual Info: GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR BluetoothTM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

PG2409T6X-E2

Abstract: HS350 PG2409T6X PG2409T6X-E2-A
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch for WiMAX. This device can operate from 0.05 to 6.0 GHz, with low insertion loss and high isolation.

HS350

Abstract: PG2415T6X
Contextual Info: GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies

PG2409TB-E4-A

Abstract: HS350 marking 34 sot-363 rf PG2409TB GaAs MMIC SPDT Switch SOT-363 marking 26 spdt sot363 spdt sot363 rf
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch for WiMAX. This device can operate from 0.5 to 3.8 GHz, with the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.

Sony Electronics

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2404T6Q L-BAND SP3T SWITCH DESCRIPTION The μPG2404T6Q is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. This device can operate frequency from 10 MHz to 2.0 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.