NEC D 587 Search Results

Contextual Info: NEC ju P D 7 2 0 6 8 NEC Electronics Inc. Floppy-Disk Controller PRELIMINARY Description Features The jiPD72068 FDC is one of NEC’s integrated solutions for today’s floppy-disk controller designs. An outgrowth of the /iPD765A—long established as the industry stan­

DTH11

Abstract: SN2 -2s4 IC-8371 UD73 BEL 548 TRANSISTOR BTS 5002 5.1 around circlet diagram NEC disk controller 75336GC uPD75P338 DIODE s3l
Contextual Info: NEC USER’S MANUAL Ml 4 -B IT SING LE-CHIP MICROCOMPUTER a P D 7 5 3 3 B //PD75P338 • b l427SES 0 [ H 4 f l 4 4 bflT ■ NEC Corporation 1991 This Material Copyrighted By Its Respective Manufacturer . _L The information in this document is subject to change without notice.

TRANSISTOR 5101 FG

Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76
Contextual Info: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 |iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices

UPD75P518GF-3b9

Abstract: E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849
Contextual Info: USER'S MANUAL µPD75518 4 BIT SINGLE-CHIP MICROCOMPUTER µPD75517 µPD75518 µPD75P518 NEC Corporation 1990 Document No. IEU-1305E O. D. No. IEU-743E Date Published January 1995 P Printed in Japan Cautions on CMOS Devices 1 Countermeasures against static electricity for all MOSs

UPC2712B

Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Contextual Info: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E

uPD72068

Abstract: NEC 596 PD72068 JPD72068 MPD72068 ti42
Contextual Info: N E C m ELECTRONICS INC 30E D' • e b427SaS 0027=150 fi ■ MPD72068 Floppy-Disk Controller N E C E lectronics Inc. T PRELIMINARY - S i - l 3 -6 > l Description Features The /¿PD72068 FDC is one of NEC’s integrated solutions for today’s floppy-disk controller designs. An outgrowth

P621

Abstract: PD7500 LED60 UPD75008 diode SKE 39 CA P621 capacitor pd6122 75P0016 IC-3647 diode 937 ke
Contextual Info: APPLICA T/ON NOTE P D 7 5 0 0 0 8 SUBSERIES 4 -B IT SINGLE-CHIP MICROCONTROLLER /¿PD750004 aPD75G006 ¿¿PD750008 /¿PD75P0G1 B NEC Corporation 1996 Document No. U10452EJ1VOANOO 1st edition Date Published February 1996 P Printed in Japan The export o f th is p ro d u ct from Japan is regulated by the Ja panese g o vernm ent. To export th is p roduct may be p rohibited

42-10A

Contextual Info: NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description ThepPD 42S4210A , 424210 A are 262 144 w ords by 16 bits dynam ic CMOS RAMs w ith optional hyper page

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /x P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s by 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility

Contextual Info: NEC THIN FILM HYBRID 1C MC-5875A/B MC-5876A/B 11.7 - 12.2 GHz LNA Modules FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN: 16 dB MIN The MC-5875A/B and MC-5876A/B are high gain, low noise amplifiers which operate from 11.7 to 12.2 GHz. The devices are two-stage amplifiers suitable for use as the 1st and 2nd

upb1509gv

Abstract: marking 1509
Contextual Info: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT juPB1509GV 1GHz INPUT DIVIDE BY 2 , 4 , 8 PRESCALER IC FOR PORTABLE SYSTEMS ¿tPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. /xPB1509GV is

sg gold plated series

Abstract: UPB1507GV 433 mhz SW
Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS ¿iPB1506GV, ¿iPB1507GV 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS ¿iPB1506GV and ¿tPB1507GV are 3.0 GHz input, high division silicon prescaler ICs for DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to produce analog DBS tuners with kit-use of 17 K series DTS

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ­

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

Contextual Info: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿iPD16675A 1/34, 1/36 DUTY LCD CONTROLLER/DRIVER The ,uPD16675A is a driver containing a RAM capable of full-dot LCD display. A single ,uPD16675A IC chip can operate a full-dot up to 128-by-32 dots LCD and two-line (upper & lower) pictograph display.

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

sg gold plated series

Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS ¿iPB1506GV, ¿iPB1507GV 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS The //PB1506GV and //PB1507GV are 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to produce analog DBS tuners with kit-use of 17 K