NEC B 536 Search Results

DTH11

Abstract: SN2 -2s4 IC-8371 UD73 BEL 548 TRANSISTOR BTS 5002 5.1 around circlet diagram NEC disk controller 75336GC uPD75P338 DIODE s3l
Contextual Info: NEC USER’S MANUAL Ml 4 -B IT SING LE-CHIP MICROCOMPUTER a P D 7 5 3 3 B //PD75P338 • b l427SES 0 [ H 4 f l 4 4 bflT ■ NEC Corporation 1991 This Material Copyrighted By Its Respective Manufacturer . _L The information in this document is subject to change without notice.

75068G

Abstract: 75p06
Contextual Info: NEC USER’S MANUAL p\ 4-B IT SINGLE-CHIP MICROCOMPUTER //PD75064 //PD750BB //PD750B8 //PD7SPOB8 NEC Corporation 19 9 3 bM 2 7 5 P 5 O G T B f lH ? L 03 IH The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without the prior written

NEC 2501 DJ 423

Abstract: "lcd 2 8" PD7533 558 timer NEC disk controller 75336GC PIN DIAGRAM OF 7 segment display LT 542 77777AV upd75390
Contextual Info: USER’S MANUAL NEC M\ 4-B IT SINGLE-CHIP MICROCOMPUTER aPD75336 ^PD75P338 • b457525 00*14044 b6T NEC Corporation 1991 n The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without th e prior w ritten

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

2SC1815

Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

PD78C10G-36

Contextual Info: 1 ^ /X Y * fiPD78C1x/C1xA/CG14/CP14 8-B it CMOS M icrocom puters W ith A/D Converter Ly Mid NEC Electronics Inc. Description The family of single-chip microcomputers covered by this data sheet includes the following types: l i PD78C10 /JPD78C11 /JPD78C14 /JPD78C10A

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

D78312

Abstract: d78312a d78312acw UPD7831x CV-AX PD78310 sill filter adapter 082BI ANA 618 BY111
Contextual Info: jk /J C V * * pPD7831xA/78P31xA 16-/8-B», Single-Chip CMOS Microcomputers, Real-Time Control Oriented NEC E lectronics Inc. D escriptio n a Four-channel 8 -bit A /D converter The pPD7831xA fam ily of m icrocomputers is designed for use in process control. They perform all the usual

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU PD 7 0 7 4 1 V821 32-/16-BIT MICROPROCESSOR The ¿¡PD70741 V821 is a 3 2 /1 6 -b it RISC m icroprocessor th a t uses, as its p ro ce sso r core, the highperform ance 32 -b it m icro p ro ce sso r ¿¡PD70732 (V 810 ™ ) designed for built-in control a pplications. It incorporates

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

Contextual Info: N E C ELECTRONICS INC 3flE D • ^ 2 7 3 2 5 D031b04 1 ■ NECE M C -4 2 1 0 0 0 A 8 1 ,0 4 8 ,5 7 6 x 8 -B it CMOS D ynam ic RAM M odule NEC Electronics Inc. Description Pin Configurations The M C -421000A 8 is a fast-page 1,048,576-word by 8-bit C M O S dynam ic R A M module designed to operate

D7806

Abstract: 7 segment display 10 pin LTS 543 details BR50M tic 2360
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUI _4iPD78062Y,78063Y,78064> 8-BIT SIN G LE-C H IP M IC R O C O N T R O LLER S D ESC R IPTIO N T h e jiP D 7 8 0 6 2 Y / 7 8 0 6 3 Y / 7 8 0 6 4 Y a r e p ro d u cts fn w h ich th e P C b u s control fu nction is a d d e d to the tx P D 7 80 62 /7 80 63 ,'

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.

nec 2561

Abstract: nec 256 HM511665-7 HM511664L-7 uPD421664-70L 511666 HM511664L-8 HM511665L-10 HM511665L-7 HM511665L-8
Contextual Info: — IM £ « a £ ¡asea OC —70 CMOS X TRAC •ax ns) TRCY ■in (ns) Dynamic R A M ( 6 5, 536X16) TÇAD (ns) 40PIN À -i TAH ■in (ns) TP nin (ns) TWCY (ns) TDH «in (ns) TRWC nin (ns) V D D or V C C (V) ID D ■ax (raA) I DD STANDBY ( I S B / 1 SB2)

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016B 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016B is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

*D431016

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016BL 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016BL is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

IC-8818

Abstract: IC-3243 PD431016 UPD431016LE-15 UPD431016LE-20 *D431016LE *D431016
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The µPD431016 is a high speed, low power, 1 048 576 bits 65 536 words by 16 bits CMOS static RAM. The µPD431016 are packed in 44-pin plastic SOJ. Feature

uPD431018

Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature