NEC B 536 Search Results

75068G

Abstract: 75p06
Contextual Info: NEC USER’S MANUAL p\ 4-B IT SINGLE-CHIP MICROCOMPUTER //PD75064 //PD750BB //PD750B8 //PD7SPOB8 NEC Corporation 19 9 3 bM 2 7 5 P 5 O G T B f lH ? L 03 IH The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without the prior written

NEC 2501 DJ 423

Abstract: "lcd 2 8" PD7533 558 timer NEC disk controller 75336GC PIN DIAGRAM OF 7 segment display LT 542 77777AV upd75390
Contextual Info: USER’S MANUAL NEC M\ 4-B IT SINGLE-CHIP MICROCOMPUTER aPD75336 ^PD75P338 • b457525 00*14044 b6T NEC Corporation 1991 n The information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form or by any means without th e prior w ritten

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

2SC1815

Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

PD78C10G-36

Contextual Info: 1 ^ /X Y * fiPD78C1x/C1xA/CG14/CP14 8-B it CMOS M icrocom puters W ith A/D Converter Ly Mid NEC Electronics Inc. Description The family of single-chip microcomputers covered by this data sheet includes the following types: l i PD78C10 /JPD78C11 /JPD78C14 /JPD78C10A

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU PD 7 0 7 4 1 V821 32-/16-BIT MICROPROCESSOR The ¿¡PD70741 V821 is a 3 2 /1 6 -b it RISC m icroprocessor th a t uses, as its p ro ce sso r core, the highperform ance 32 -b it m icro p ro ce sso r ¿¡PD70732 (V 810 ™ ) designed for built-in control a pplications. It incorporates

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: N E C ELECTRONICS INC 3flE D • ^ 2 7 3 2 5 D031b04 1 ■ NECE M C -4 2 1 0 0 0 A 8 1 ,0 4 8 ,5 7 6 x 8 -B it CMOS D ynam ic RAM M odule NEC Electronics Inc. Description Pin Configurations The M C -421000A 8 is a fast-page 1,048,576-word by 8-bit C M O S dynam ic R A M module designed to operate

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.

nec 2561

Abstract: nec 256 HM511665-7 HM511664L-7 uPD421664-70L 511666 HM511664L-8 HM511665L-10 HM511665L-7 HM511665L-8
Contextual Info: — IM £ « a £ ¡asea OC —70 CMOS X TRAC •ax ns) TRCY ■in (ns) Dynamic R A M ( 6 5, 536X16) TÇAD (ns) 40PIN À -i TAH ■in (ns) TP nin (ns) TWCY (ns) TDH «in (ns) TRWC nin (ns) V D D or V C C (V) ID D ■ax (raA) I DD STANDBY ( I S B / 1 SB2)

IC-8818

Abstract: IC-3243 PD431016 UPD431016LE-15 UPD431016LE-20 *D431016LE *D431016
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The µPD431016 is a high speed, low power, 1 048 576 bits 65 536 words by 16 bits CMOS static RAM. The µPD431016 are packed in 44-pin plastic SOJ. Feature

Contextual Info: SEC /¿PD27C512G/G 5 2 4 2 8 8 B IT C M O S ONE T IM E PR O M DESCRIPTION The fiP027C512C/G is a 524 288 bit 65 536 x 8 bit one tim e programmable read-oniy memory (OT PROM). It operates from a single +5 V power supply, making it ideal for microprocessor applications. It is fabricated using an

awm STYLE 2990

Abstract: AWM 2990 awm 2919 vw-1 Belden AWM 2919 awm 2990 vw-1 Belden AWM 2448 awm 2919 AWM VW-1 30V 2990 awm STYLE 2919 AWM STYLE 2448
Contextual Info: B R O A D C A S T C A B L E S 19.49 Precision Video Cable for Analog and Digital Overview 19 • Brilliance Broadcast B R I L L I A N C E® Analog Video Parallel Digital Video D1, D2 & D3 Belden® precision video cables are used in critical analog and digital

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

D784031GC

Abstract: CR02 am transistor nec 78 D784035 D784031G 0007FH D784036A
Contextual Info: DATA SHEET ¿iPD784031 A MOS INTEGRATED CIRCUIT 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784031(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the / xPD784031 (A) than the /¿PD784031 (standard product).

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

uc8151

Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

TOSA DWDM

Abstract: NX8531NH TEC TOSA
Contextual Info: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD78P356 A 16 BIT SIN G L E -C H IP M IC R O C O M P U T E R The /iPD78P356(A) is produced by replacing the internal mask R O M of the pPD78356(A) with a one-time PROM. One-time P R O M products, in which data can be written once are effective for manufacture of small quantities of