NEC 12 F Search Results

2SC3542

Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP

2464 22 awg cable black

Abstract: C2427a 2587 0117 astm b33 C 2587 C2425A C2406A C2429A
Contextual Info: Electronics Communication & Control Cable, Multi-Conductor Multi-Conductor, Unshielded UL 2464, UL 2587, NEC Type CL3 and CM UL c(UL), CSA CMG Product Construction: Conductor: • 16 thru 12 AWG fully annealed stranded tinned copper per ASTM B-33 Insulation:

SDHC physical layer

Abstract: SONY GERMANIUM TRANSISTOR FAT32 8gb toshiba memory silicon power sdhc class 10 Silicon SDHC silicon power 8GB
Contextual Info: EYE 12 December 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 173 CONTENTS New Products Toshiba Introduces World's Highest Class of SDHC Card to the World Market .2 INFORMATION Toshiba, Sony and NEC Electronics Unveil Mass

C2516A

Abstract: C2535 C25-28A c2536a c2539 c2514 C2534 c2555a C2528A C2540
Contextual Info: Communication & Control Cable, Multi-Conductor Electronics Multi-Conductor, Foil Shield NEC Type CL2 and CM UL c(UL) CMH Product Construction: Conductor: • 24 thru 12 AWG fully annealed solid or stranded tinned copper per ASTM B-33 Insulation: • Premium-grade, coIor-coded

LD2909

Abstract: Endicott Research Group
Contextual Info: LD2909 Specifications and Applications Information Two Lamp DC to AC Inverter 01/20/11 Package Configuration 1.03 [26,2] MAX J1 1 .14 [3,6] Powered by a regulated 12 Volt DC source, the LD2909 is designed to power the backlight of the NEC NL10276BC30-10 display.

transformer for lm2577

Abstract: LM2577 sepic
Contextual Info: IN T E G R A T E D C IR C U IT S UC2577-12/15 U N IT R Q D E u n PRELIMINARY FEATURES DESCRIPTION • Requires Few External Components • NPN Output Switches 3.0A, 65V max The UC2577 family of devices provides all the active functions nec­ essary to implement step-up (boost), flyback, and forward converter

222k

Abstract: 079R PC-100 PC100-222 KO9018
Contextual Info: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.

nec 10f

Abstract: uPD65881 IC Ensemble mentor robot MM 5649 A1362 CMOS-N5 NEC lqfp 52
Contextual Info: 0.5µm CMOS Gate Array CMOS-N5 Family New s t c u Prod Features The CMOS-N5 family is a channel-less type gate array that provides high speed operation with a 5-V power supply voltage. Drastic cost reductions have been achieved compared with the conventional CMOS-6 and CMOS-8 families thanks to

awm STYLE 2919 COMPUTER CABLE 30V

Abstract: nec 8772 P awm 2464 vw-1 80c 300v awm 2919 vw-1 awm STYLE 2919 COMPUTER CABLE 30V vw-1 awg 2464 28 awg 80 c 300v vw-1 AWM 2919 VW-1 30V Belden AWM 2464 80c 300v nec 8772 AWM VW-1 30V
Contextual Info: 4.1 Multi-Conductor Cables Table of Contents 4 Multi-Conductor Cables Page No. Introduction 4.2 Selection Guide: Shielded Computer Cables for RS-232 Applications 4.2 Unshielded 4.3–4.9 Audio, Control and Instrumentation Cables 4.3 22 AWG Non-Plenum & Plenum

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16882 MONOLITHIC CD-ROM/DVD-ROM 3-PHASE SPINDLE MOTOR DRIVER DESCRIPTION The µPD16882 is a CD-ROM/DVD-ROM 3-phase spindle motor driver consisting of a CMOS controller and MOS bridge outputs. By employing 3-phase full-wave PWM as the drive method and MOSFETs at the output stage, it has been

82N06

Abstract: transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

PS7801D-1A

Abstract: PS7801D-1A-A PS7801D-1A-F3 PS7801D-1A-F3-A
Contextual Info: Solid State Relay OCMOS FET PS7801D-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 0.6 pF 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801D-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

NES2427P-60

Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power CW with high

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

NP100P06PDG

Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY

D1677

Abstract: 2SK3794-Z 2SK3794
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3

d1413

Abstract: 2SK3356 NEC J 302 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

uPD3799

Abstract: PD3799CY
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3799 5300 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3799 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3799 has 3 rows of 5300 pixels, and each row has a single-sided readout type of charge transfer register.

IC nec 555

Abstract: ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05

uPC494C

Abstract: UPC494GS NEC uPC494C PWM Power Control Circuit uPc494 TL494C pin diagram TL494C 330V PC494 PC494C
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC494 SWITCHING REGULATOR CONTROL CIRCUIT DESCRIPTION The µPC494 is an inverter control unit which provides all the control circuitry for PWM type switching regulators. Included in this device is the voltage reference, dual error amplifiers, oscillator, pulse width modulator, pulse

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

NP32N055HDE

Abstract: NP32N055IDE NP32N055SDE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.