NE32984D Search Results

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I ds = 10 mA • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz 00 •a • Lg < 0.20 urn, W g = 200 im

U/25/20/TN26/15/850/NE32984D

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s b 2V , Io s - 1 0 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m TJ • Lg S 0 .2 0 |im , W g = 2 0 0 |u n

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

NE32984D

Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • Lg < 0.20 ^m, WG = 200 \im

840-SL

Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm

NEC D288

Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

low noise, hetero junction fet

Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

nec d1594

Abstract: d2144 D1716 transistor D331 transistor d1397 KA transistor 26 to 40 GHZ transistor D734 D734 transistor NE32984D NE32984D-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE42484

Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

NE334S01

Abstract: E7138 nec microwave NE76084 NE67383
Contextual Info: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products