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40T1
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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40T10
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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40T11
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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70.63KB |
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40T12
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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70.63KB |
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40T13
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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70.63KB |
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40T14
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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40T15
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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70.63KB |
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NCEAP40T13AGU
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NCEPOWER
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NCEAP40T13AGU is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 165A continuous drain current, 2.0mΩ typical RDS(ON) at VGS=10V, suitable for automotive applications, DC/DC converters, and high-frequency switching. |
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AK40T11A
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP40T11A with 40V drain-source voltage, 110A continuous drain current, 2.5mΩ typical RDS(on) at VGS=10V, 30.4nC total gate charge, suitable for high-frequency switching and synchronous rectification. |
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NCEAP40T17AD
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NCEPOWER
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NCE AP40T17AD is an Automotive N-Channel Super Trench Power MOSFET with 40 V drain-source voltage, 275 A continuous drain current, 1.4 mΩ typical RDS(on) at 10 V VGS, and 175 °C operating temperature, suitable for high-frequency switching and synchronous rectification. |
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NCE40T120VT
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NCEPOWER
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1200V, 40A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. |
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NCEAP40T11AG
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NCEPOWER
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NCEAP40T11AG is an Automotive N-Channel Super Trench Power MOSFET with 40V VDS, 150A ID, 2.5mΩ RDS(ON) at VGS=10V, featuring low gate charge and high-frequency switching performance in a PDFN5x6-8L package. |
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NCEAP40T11K
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NCEPOWER
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NCEAP40T11K is a 40V, 150A N-channel Super Trench power MOSFET with 2.4 mΩ typical RDS(ON) at VGS = 10V, optimized for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. |
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AKP40T11A
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP40T11A with 40V drain-source voltage, 110A continuous drain current, 2.5mΩ typical RDS(ON) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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NCE40T120WD
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NCEPOWER
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1200V, 40A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-263 package. |
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AKP40T11
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AK Semiconductor
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AKP40T11 N-Channel Super Trench Power MOSFET with 40V drain-source voltage, 110A continuous drain current, 2.3mΩ typical RDS(on) at VGS=10V, and 3.3mΩ at VGS=4.5V, optimized for high-frequency switching and synchronous rectification. |
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NCEAP40T11G
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NCEPOWER
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NCE AP40T11G is an Automotive N-Channel Super Trench Power MOSFET with 40 V drain-source voltage, 150 A continuous drain current, 2.2 mΩ typical RDS(on) at VGS = 10 V, and 175°C maximum operating junction temperature. |
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AKP40T17A
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP40T17A with 40V drain-source voltage, 170A continuous drain current, 1.4mΩ typical RDS(on) at 10V VGS, optimized for high-frequency switching and synchronous rectification applications. |
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AKP40T11K
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AK Semiconductor
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AKP40T11K N-Channel Super Trench MOSFET with 40V drain-source voltage, 110A continuous drain current, 2.4mΩ typical RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification applications. |
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NCEAP40T14AK
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NCEPOWER
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NCE AP40T14AK is an automotive-grade N-channel Super Trench Power MOSFET with 40V drain-source voltage, 190A continuous drain current, 1.95mΩ typical RDS(on) at 10V VGS, and low gate charge for high-frequency switching applications. |
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NCEAP40T13AGU
