IS21S Search Results

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB

TLCS-42

Abstract: 42c40 BM4211B TMP42C40P TMP42C60P TLCS-42, 47
Contextual Info: T O S H IB A TMP42C40/60 C M O S 4 -B IT M IC R O C O N T R O LLE R TM P42C40P, TMP42C60P T h e 42C 40/6 0 a re co m p act, h ig h speed 4 -b it sin g le ch ip m icro co m p u te rs in te g ra tin g R O M , RA M in p u t/o u tp u t po rts, an d in te rv a l tim e r. T h e 42C 40/60 a re th e sta n d a rd ty p e d evices in th e TLC S-42 CM O S series.

nec k 813

Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NE429M01

Abstract: NE429M01-T1
Contextual Info: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE

pt 7313

Abstract: NE425S01 NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz

Contextual Info: ISSI IS25F080A 8M-BIT SERIAL FLASH MEMORY WITH 4-PIN SPI INTERFACE FEATURES • Flash Storage for Resource-Limited Systems - Ideal for portable/mobile and microcontroller-based applications that store data, audio, and images • N e x F L A S H Nonvolatile Memory Technology

PT 4207

Abstract: NE325S01 NE325S01-T1 NE325S01-T1B gm 572
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz Noise Figure, NF dB

Contextual Info: MOTOROLA bôE D SEMICONDUCTOR TECHNICAL DATA MOTM b 3 h 7 e S 2 0 0 ^ 5 21 1 blfl MO TO RO LA SC L06IC 68030/040 ECL/TTL Clock Driver MC10H640 MC100H640 The M C10H/100H640 generates the necessary clocks for the 68030, 68040 and sim ilar m icroprocessors. It is guaranteed to meet the clock

lg 8993

Abstract: LG 631 NE4210M01 NE4210M01-T1 13352 8582
Contextual Info: NE4210M01 SUPER LOW NOISE HJ FET FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • SUPER LOW NOISE FIGURE: 0.8 dB TYP at f = 12 GHz 2.5 • HIGH ASSOCIATED GAIN: 11.0 dB TYP at f = 12 GHz 2.0 16 1.5 12 1.0 8 20 VDS = 2 V ID = 10 mA • GATE WIDTH: WG = 200 µm

NE32984D

Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE

transistor D227

Abstract: nec D227 transistor k 4212 fet D3052 NE23383B transistor d115 NEC D74 transistor d145 transistor D95 D1542
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.

2SC4866

Abstract: 2SC48 2SC4865 2SC4885 2SC4899
Contextual Info: /]' I â § f f l h 7 > v ^ M — fe iS iB • 2 S C 4 8 6 5 Z # « É : VHF/UHF É w í S S t ^ i M W Í o mmr-bZo it s : ^ % ë. s H æ të ë « s Vc e o V 8 I c b o (M ) Ve b o (V) 2 hFE Ä 'J ' =# « Ê : VHF/UHF I Ö S « i g t f l S S o : { S i t e f T £>•£o rrrj^Ji^T'-fe-Sc

NE325S01-T1B

Abstract: NE325S01 NE325S01-T1
Contextual Info: C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: ≤ 0.20 µm

NE332

Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE434S01

Abstract: NE434S01-T1 NE434S01-T1B TVRO
Contextual Info: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB