N4 AMPLIFIER Search Results

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson IS0255 B U R R - BROW N4 E 1 Precision, Powered, Three-Port Isolated INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • RATED 1500Vrms Continuous 2500Vrms for One Minute 100% Tested for Partial Discharge

DSAFG01

Contextual Info: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

rty 117-5

Abstract: 0709s
Contextual Info: TOSHIBA 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4842 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ld B , |S2 iel2= 14dB f=lG H z 2.1 ± 0.1 1.25±0.1 n4 MAXIMUM RATINGS (Ta = 25°C)

equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1

iw 1688

Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Contextual Info: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

transistor BF 697

Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
Contextual Info: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency

ba7106

Contextual Info: PAL and SECAM discriminator, with switch, for use in delay lines BA7106LS The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units : mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.

BA7106LS

Abstract: N4 Amplifier GV-28 SZIP24 discriminator 5.5 Mhz ba7106
Contextual Info: BA7106LS PAL and SECAM discriminator, with switch, for use in delay lines The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units: mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.

EX-42

Abstract: EX-43T EX-43 EX-44 RX-LS200 43t transistor Sunx EX 42
Contextual Info: SERIES Amplifier Built-in Convergent Reflective Photoelectric Sensor EQ-20 PHOTOELECTRIC SENSORS EX-40 EX-40 EQ-30 Reliable Object Detection in Limited Area Conforming to EMC Directive EX 10mm 30mm 50 Distance to convergent point Black substrate 30 Black rubber sheet

Contextual Info: 353 Convergent Reflective Photoelectric Sensor EX-40 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions. P.1359~ / P.1405 Amplifier Built-in ■■Sensor selection guide. P.283~

N4 MMIC

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

NGA-486

Contextual Info: Product Description Stanford Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases

N4 Amplifier

Abstract: N4 MMIC NGA-489 transistor tl 187
Contextual Info: Product Description Stanford Microdevices’ NGA-489 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 10 GHz with excellent thermal perfomance. The heterojunction increases

NGA-489

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

N4 MMIC

Abstract: marking n4 mmic
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

N4 MMIC

Abstract: TRANSISTOR BI 243 NGA-486 Sirenza Microdevices, Inc amplifier marking n4 N4 Amplifier
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BF250

Abstract: x4b2 OPA603 kf016f p16hc RB50 016f
Contextual Info: * OPA603X CURRENT-FEEDBACK AMPLIFIER "CIRCUIT MODEL" SUBCIRCUIT * * CREATED USING BLOOD,SWEAT AND TEARS ON 10/12/90 AT 09:03AM * REV.B 5/23/91 * REV.C 10/20/92 - SYNTAX ERRORS BCB * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

N7 thermistor

Abstract: 20/shicoh n7
Contextual Info: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal

I 508 V

Abstract: 2N4033 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030
Contextual Info: 2N4030-2N4031 2N4032-2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031, 2N4032, and 2N4033 are silicon planar epitaxial PNP transistors in Jedec TO39 metal case primarily intended for large signal, low noise industrial applications.

UZB16015

Abstract: UZB1601 UZB803 079INCH npn transistor t12 UZB1602 UZB801 UZB802 UZB16025 UZB20225
Contextual Info: UZB1/2 series 0.6.10 10:49 Page 2 UZB1/2 series SUPER-SLIM PHOTOELECTRIC SENSORS AMPLIFIER BUILT-IN EXTRAORDINARILY DOWN-SIZED PNP output type available PNP output type which is much in demand in Europe is now available. Of course, it conforms to the EMC directive.