N4 AMPLIFIER Search Results

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson IS0255 B U R R - BROW N4 E 1 Precision, Powered, Three-Port Isolated INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • RATED 1500Vrms Continuous 2500Vrms for One Minute 100% Tested for Partial Discharge

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

EX-42

Abstract: EX-43T EX-43 EX-44 RX-LS200 43t transistor Sunx EX 42
Contextual Info: SERIES Amplifier Built-in Convergent Reflective Photoelectric Sensor EQ-20 PHOTOELECTRIC SENSORS EX-40 EX-40 EQ-30 Reliable Object Detection in Limited Area Conforming to EMC Directive EX 10mm 30mm 50 Distance to convergent point Black substrate 30 Black rubber sheet

N4 MMIC

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

NGA-489

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

N4 MMIC

Abstract: marking n4 mmic
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BF250

Abstract: x4b2 OPA603 kf016f p16hc RB50 016f
Contextual Info: * OPA603X CURRENT-FEEDBACK AMPLIFIER "CIRCUIT MODEL" SUBCIRCUIT * * CREATED USING BLOOD,SWEAT AND TEARS ON 10/12/90 AT 09:03AM * REV.B 5/23/91 * REV.C 10/20/92 - SYNTAX ERRORS BCB * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

N7 thermistor

Abstract: 20/shicoh n7
Contextual Info: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal

I 508 V

Abstract: 2N4033 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030
Contextual Info: 2N4030-2N4031 2N4032-2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031, 2N4032, and 2N4033 are silicon planar epitaxial PNP transistors in Jedec TO39 metal case primarily intended for large signal, low noise industrial applications.

UZB16015

Abstract: UZB1601 UZB803 079INCH npn transistor t12 UZB1602 UZB801 UZB802 UZB16025 UZB20225
Contextual Info: UZB1/2 series 0.6.10 10:49 Page 2 UZB1/2 series SUPER-SLIM PHOTOELECTRIC SENSORS AMPLIFIER BUILT-IN EXTRAORDINARILY DOWN-SIZED PNP output type available PNP output type which is much in demand in Europe is now available. Of course, it conforms to the EMC directive.

Contextual Info: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for

VARIABLE ATTENUATOR, dc TO 3gHZ

Contextual Info: AT02M750.06 - Page 1 of 14 Product Family: Temperature Variable Attenuators Part Number Series: ATV0805C Series Construction: Features: •          High purity Alumina Substrate Thermo-sensitive thermistor

SUS304

Abstract: EX-13A-PN EX-11A EX-13EA-PN EX-11P OS-EX10E-12
Contextual Info: EX-10 SERIES Amplifier Built-in Ultra-slim Photoelectric Sensor Amplifier Built-in Extraordinarily Small and Slim Size Marked Conforming to EMC Directive Excluding EX-15Ⅺ/EX-17Ⅺ Smallest Body, Just 3.5mm Thick High-speed Response Time: 0.5ms Flexible Mounting

mosfet equivalent book

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. RoHS compliant SPECIFICATIONS 0.65 0.70 0.65

Contextual Info: P*V series, thermal sensitive chip attenuators. Excellent stability in high-frequency signal output from GaAs MOS-FET amplifier. Declines in output gains due to thermal effects may be easily offset by the use of this thermo-variable attenuators. SPECIFICATIONS

mosfet equivalent book

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

N4 Amplifier

Abstract: marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41
Contextual Info: NPN RF Amplifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous

mosfet equivalent book

Contextual Info: P*V series, thermal sensitive chip attenuators. Excellent stability in high-frequency signal output from GaAs MOS-FET amplifier. Declines in output gains due to thermal effects may be easily offset by the use of this thermo-variable attenuators. SPECIFICATIONS

mosfet equivalent book

Abstract: db 3202
Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

Contextual Info: Components Temperature compensated chip attenuators • P＊V series Features ● For simplifying temperature drift compensation of GaAs high frequency amplifiers ● Excellent high frequency characteristics Applications ● Base station and others ※ Except for