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    N-CHANNEL MOSFETS Search Results

    N-CHANNEL MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK5R1A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet
    TK065U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Datasheet

    N-CHANNEL MOSFETS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nchannel

    Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
    Contextual Info: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ


    Original     		DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel PDF

    CMLDM7005

    Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
    Contextual Info: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),


    Original     		CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR PDF

    CMRDM Series

    Abstract: PB CMRDM Series CMRDM CMRDM3590
    Contextual Info: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590


    Original     		CMRDM3590 160mA CMRDM7590 140mA CMRDM3575 OT-963 OT-963 CMRDM Series PB CMRDM Series CMRDM CMRDM3590 PDF

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th PDF

    FDMS7700S

    Abstract: 501B 8 P mosfet 9630
    Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDMS7700S FDMS7700S 501B 8 P mosfet 9630 PDF

    FDMS7600AS

    Abstract: 501B 8 P
    Contextual Info: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDMS7600AS FDMS7600AS 501B 8 P PDF

    FDML7610S

    Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDML7610S FDML7610S PDF

    FDML7610S

    Abstract: C3028 561b
    Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDML7610S FDML7610S C3028 561b PDF

    RTJC

    Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H RTJC PDF

    Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDML7610S PDF

    Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDMS7700S PDF

    Contextual Info: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDMS7600AS PDF

    FDMS3604S

    Abstract: 501B 8 P 231B DIODE
    Contextual Info: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A


    Original     		FDMS3604S FDMS3604S 501B 8 P 231B DIODE PDF

    Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H PDF

    FDD3510H

    Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V PDF

    c151A

    Abstract: FDMS3602S
    Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A


    Original     		FDMS3602S c151A FDMS3602S PDF

    FDS8858CZ

    Abstract: fds8858
    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 PDF

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180 PDF

    Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    FDS8858

    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858 PDF

    Contextual Info: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H PDF

    Contextual Info: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H F085A PDF

    Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H PDF