N-CHANNEL MOSFETS Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

FDMS7700S

Abstract: 501B 8 P mosfet 9630
Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

FDMS7600AS

Abstract: 501B 8 P
Contextual Info: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

FDML7610S

Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

c151A

Abstract: FDMS3602S
Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A

FDS8858CZ

Abstract: fds8858
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDS8858

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDD8424

Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

FDD8424h

Abstract: fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench
Contextual Info: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

fdms3600

Contextual Info: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMSDM7590

Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Contextual Info: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

Contextual Info: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A

Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested

Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested

Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested

1351D

Abstract: FDPC8011S FDPC8011
Contextual Info: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel General Description „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A This device includes two specialized N-Channel MOSFETs in a Q2: N-Channel dual package. The switch node has been internally connected to

marking code CT

Abstract: "MARKING CODE CT" SOT-963
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

Dual N-Channel

Abstract: TLM832D
Contextual Info: CTLDM7120-M832D SURFACE MOUNT TLMTM DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7120M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel

Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

marking code ct

Abstract: 50s MARKING CODE
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for