N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V Search Results

air variable capacitor

Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STN*4440

Abstract: STN4440
Contextual Info: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

STN44

Abstract: marking code 82A
Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

MAG90X95

Contextual Info: MAG90X95 MAG91X96 TEC M A G N A MECHANICAL DATA Dimensions in mm COMPLIMENTARY PAIR DUAL CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS M ax. 1 1.43 0.450 1.09 (0.043) 0.97 (0.038) * * Dia. 1 ' Î • 1.63 (0.064) 1.52 (0.060) 6.35 (0.250) FEATURES

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

ZVN2106B

Contextual Info: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0 Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

NTE2940

Contextual Info: NTE2940 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:

NTE2940

Contextual Info: NTE2940 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:

apm6048

Abstract: APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4
Contextual Info: APM6048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 60V/8A, RDS(ON)=40mΩ (typ.) @ VGS=10V RDS(ON)=60mΩ (typ.) @ VGS=4.5V • P-Channel -60V/-8A, RDS(ON)=85mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=105mΩ (typ.) @ VGS=-4.5V

Contextual Info: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ

B60N06

Abstract: b60 n06 MTB60N06J3 N06 MOSFET
Contextual Info: CYStech Electronics Corp. Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB60N06J3 BVDSS 60V ID 12A RDSON MAX 60mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package

fma16n60e

Abstract: FMA16N60E,16N60E
Contextual Info: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: 16N60 TO-220F JEDEC
Contextual Info: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

MV16N60E

Abstract: ic MARKING QG
Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

TLF35584

Abstract: TLE9180 77GHz Radar TLE5041 TLE8000 TLE8758 RRN7740 BGT24ATR12 TLE8760 RTN7730
Contextual Info: Driving the Future of Automotive Electronics Automotive Application Guide www.infineon.com/automotive 2 Contents Challenges and Trends 04 Safety Applications 06 Body Applications 22 Powertrain Applications 37 H EV Applications 48 Enhanced Communication 54

16n60e

Abstract: 16N60ES
Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

FMP16N60E

Abstract: 16N60E
Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Ic C 141

Abstract: ic MARKING QG
Contextual Info: DATE DRAWN Oct.-06-'08 CHECKED Oct.-06-'08 CHECKED Oct.-06-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Diode SMD SJ 94

Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ
Contextual Info: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Contextual Info: DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRO D UC T Product Summary Features V BR DSS RDS(on) max -100V 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V • • • • • ID T C = 25°C -9A -8A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)