STN44 Search Results

STN*4440

Abstract: STN4440
Contextual Info: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

MOSFET 30v sop-8

Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44
Contextual Info: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

MOSFET 30v sop-8

Abstract: STN4488
Contextual Info: STN4488L Dual N Channel Enhancement Mode MOSFET 20A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.

STN442

Abstract: STN44 Stanson Technology MOSFET 20V 80A
Contextual Info: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STN442D

Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
Contextual Info: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE

Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE

STN4488

Contextual Info: STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.

Contextual Info: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

stn440

Abstract: STN4402 Stanson Technology
Contextual Info: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STN44

Abstract: marking code 82A
Contextual Info: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are