N-CHANNEL DEPLETION MODE FET Search Results

Contextual Info: N-Channel Depletion-Mode 4-Channel DMOS FETArmy calocflc o CORPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.

1D47

Abstract: SD5501 SD5501N XSD5501 13G46
Contextual Info: N-Channel Depletion-Mode 4-Channel DMOS FET Array C U lO Q I C RPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.

Contextual Info: « m Ia W î# C U lO Q IC N-Channel Depletion-Mode 4-Channel DMOS FETArray RPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

FET 4900

Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

sot transistor pinout

Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

FET marking code ndew

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

FET SOT-89 N-Channel

Abstract: CPC3710C ignition module sot89 fet
Contextual Info: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

RY115

Abstract: CPC3714C R00a D 4242 transistor
Contextual Info: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

transistor marking code 12W SOT-23

Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

depletion mode fet

Abstract: CPC3730C MOSFET 350V SOT-89
Contextual Info: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

ultra FAST DMOS FET Switches

Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
Contextual Info: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

DN3545N8-G

Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

mos fet marking k4

Abstract: DN3765 DN3765K4-G 2L43 transistor MARKING K4
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN5SW

Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA
Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

DN5MW

Abstract: DN3545 DN3545N3-G DN3545N8-G
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

mos fet marking k4

Abstract: dn37 DN3765 DN3765K4-G
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN2624

Abstract: DN2624N3
Contextual Info: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 240V 4.0Ω 600mA Order Number / Package TO-92 DN2624N3 Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors

e041

Contextual Info: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate