DN37 Search Results

Contextual Info: Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

DN3765

Contextual Info: DN3765 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 95.3 95.3 11 ± 1.5 Au 1 (mils) DN3765 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

mos fet marking k4

Abstract: dn37 DN3765 DN3765K4-G
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

transistor MARKING K4

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN3765

Contextual Info: Supertex inc. DN3765 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 95.3 95.3 11 ± 1.5 Au 1 (mils) DN3765 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si

mos fet marking k4

Abstract: DN3765 DN3765K4-G 2L43 transistor MARKING K4
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

two transistor flyback

Abstract: DN-37 unitrode Applications Note UC494 cost of Inductor 1N5820 UC494A power factor correction buck topology boost converter using zero volt technique DN-38
Contextual Info: DN-38 Design Notes UNIQUE “CHEAP AND DIRTY” CONVERTER FOR LOW POWER BIAS SUPPLIES Bill Andreycak Regulated output voltage is obtained - regardless of input voltage Most power supply designs use PWM controller ICs and MOSFET switches which require 10 to 15 volt

Fairchild, 2N3019

Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN

4816P-001

Abstract: elco 330 u RSM-200 zener SMD MARK A9 FPM DRAM 30-pin SIMM PPC821ZP 1M - FLASH PCMCIA linear card P10 Draloric siemens rs232 connector com TRANSISTOR c104
Contextual Info: MOTOROLA Motorola Semiconductor Israel Ltd. COMMUNICATIONS & ADVANCED CONSUMER TECHNOLOGY GROUP MPC821 Applications Development System ADS UserÕs Manual Revision B ISSUE 1.4b - Rev B Release, 8/15/97 SIX SIGMA 6σ MOTOROLA MPC821ADS User’s Manual (Revision B)

Siemens LCD Display C75

Abstract: RMC TYOHM siemens rs232 connector com zener SMD MARK A9 Zener Diode BA11 Telefunken DALE SOMC elco 330 u LD11 LD12
Contextual Info: MOTOROLA Motorola Semiconductor Israel Ltd. COMMUNICATIONS & ADVANCED CONSUMER TECHNOLOGY GROUP MPC821 APPLICATION DEVELOPMENT SYSTEM ADS USER’S MANUAL Board Revision - A Issue 0.1 - Draft 8/24/95 - ENG Issue 1.1a - 2/9/96 - ENG Revision Issue 1.2a - 5/6/96 - PILOT Revision

PA0815

Abstract: UPS Telecom IT HAT2165H FCX491A FDC2512 LTC3706 LTC3725 PA1294 Si7450DP ltc3705 transformer
Contextual Info: advertisement Isolated Converters Have Buck Simplicity and Performance Design Note 377 Kurk Mathews timing and optoisolator feedback to control the output secondary . The circuit shown in Figure 1 offers a more direct approach using fewer components. The LTC3706

Telefunken

Abstract: dark detector alarm using 555 timer BLOCK DIAGRAM MPC801 MPC821 MPC823 MPC860SAR MPC860T MPC850 MPC860 KYOCERA 50Mhz oscillator
Contextual Info: MPC8xxFADS User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

lg r40 MOTHERBOARD CIRCUIT diagram

Abstract: MPC801 MPC821 MPC823 MPC850 MPC860 MPC860SAR MPC860T MPC813 3Cs 6 PIN SMD CHIP
Contextual Info: MPC8xxFADS User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

LT6101

Abstract: ECU PWM 10a h-bridge driver 10 amp H-bridge Mosfet engine ecu been LT6100 LTC6101 LTC6101HV DN374
Contextual Info: Monitor and Protect Automotive Systems with Integrated Current Sensing – Design Note 374 John Munson Simple Current Monitoring Solutions The LT 6100 and LTC6101 are high side current-sense amplifiers that have been developed specifically to address the automotive designers’ needs. These parts require a

thermistor 102k

Abstract: LT1494 LT1497 LTC2484 000-but
Contextual Info: advertisement Easy Drive ADCs Simplify Measurement of High Impedance Sensors – Design Note 379 Mark Thoren Delta-sigma ADCs, with their high accuracy and high noise immunity, are ideal for directly measuring many types of sensors. Nevertheless, input sampling currents can

zener diode in 12v 3a power supply

Abstract: LT3470 30 volts boost converters 409K LQH32CN150K53 diode zener 40v f03a DIODE
Contextual Info: advertisement ThinSOT Micropower Buck Regulator Has Low Output Ripple Design Note 373 Keith Szolusha Introduction High voltage monolithic step-down converters simplify circuit design and save space by integrating the high-side power switch into the device. In most cases, the switch is

Diode SMD ED 98

Abstract: elco 330 u RSM-200 sw1 spdt Telefunken 102 M SE smd zener diode code 8M LD11 LD12 MPC821
Contextual Info: Freescale Semiconductor, Inc. Motorola Semiconductor Israel Ltd. MOTOROLA COMMUNICATIONS & ADVANCED Freescale Semiconductor, Inc. CONSUMER TECHNOLOGY GROUP O IC EM R, O CT U ND C IN . MPC821 APPLICATION S E DEVELOPMENT SYSTEM L A C ES ADS E FR USER’S

LT6101

Abstract: LT6100 LTC6101 LTC6101HV 10A motor drive 10a h-bridge driver automotive ecu circuit "Current-Sense Amplifiers" DN374
Contextual Info: advertisement Monitor and Protect Automotive Systems with Integrated Current Sensing – Design Note 374 John Munson Simple Current Monitoring Solutions The LT 6100 and LTC6101 are high side current-sense amplifiers that have been developed specifically to address

LE1182

Abstract: E4436B HP8616A video balun LT5528
Contextual Info: advertisement LT5528 WCDMA ACPR and AltCPR Measurements – Design Note 375 Doug Stuetzle LT5528, which is a high linearity direct I/Q modulator. It accepts complex modulation signals at its baseband inputs and generates a modulated RF signal at the RF output. An accurate measurement of the spectral regrowth of a highly linear device such as the LT5528 is

Telefunken

Abstract: zener Diode B23 DALE SOMC elco 330 u Elco 90 pin connector 74ACT86 siemens rs232 connector com PLUG 41612 elco 32.768 smd pcmcia for RS232
Contextual Info: MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY TECHNOLOGIES GROUP MPC860ADS User’s Manual Board Revision - ENG ISSUE 0.1- DRAFT 8/24/95 ISSUE 1.1 - Release 1/29/96 ISSUE 1.1a - Release 3/22/96 SIX SIGMA 6σ MOTOROLA Thi d t t d ith F