N 821 DIODE Search Results

IRF820

Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

250M

Abstract: IRFS820 IRFS821
Contextual Info: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

TX09D70VM1CCA

Abstract: FA5S040HP1R3000 2705-TX09D70VM1 2711-TX09D70VM1 hitachi tx09 hitachi shipping label JIS K 5400 8.1 2711-TX09D70VM1CCA-6 JIS K 5400 JIS K 5400 8.3
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : S TD DATE : Oct. 14.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX09P70VM1CCA C O N T E N T S

lcd gba

Abstract: TX09D70VM1CBA sharp lcd t-con BD500202A stv 312 2708-TX09D70VM1C-B
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : S T D DATE : May. 13.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX09D70VM1CBA C O N T E N T S

N821

Abstract: 1n zener N821A
Contextual Info: 1N 821, A , -1 thru 1 N 829, A , -1 DO-35 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES • ZENER VOLTAGE 6.2 V AND 6.55 V • 1N821. 823, 825, 827 AND 829 HAVE JAN . JA N T X , JANTXV-1 QUALIFICATIONS TO M IL-S-19500/159 • JAN S EQUIVALENT AVAILABLE VIA SCD

IRF820

Abstract: IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRF820

Abstract: IRF820.821 IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

samsung 822

Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance

MRD821

Abstract: diode gi 3106 DIN5030 MLED81
Contextual Info: MOTOROLA • i SE M IC O N D U C TO R TECHNICAL DATA Photo Detector M R D 821 Diode Output This device ¡s designed fo r infrared rem ote control and other sensing applications, and can be used in conjunction w ith the MLED81 infrared em itting diode. •

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

yd 803 ic

Abstract: yd 803 Kaohsiung Hitachi Electronics
Contextual Info: HITACHI K A O HSIUNG HITACHI ELE C TR O N IC S C O .,LTD P.O. BOX 26-27 2,1 3TH EA ST ST. K .E.P.Z. K A O HSIUNG TA IW A N R .O .C . TEL: 07 8215811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : DATE : May. 13.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX07D09VM1 CAB

CH829

Abstract: diode Lz zener i829 1N4565A 1N4584A 1N829 CH821 CH823 CH825 CH827
Contextual Info: T EM P E R A T U R E COMPENSATED VOLTAGE REGULATOR PLANAR DIODE CHIPS 6.2-6.4 VOLTS SINGLE CHIP Electrically equivalent to the JE D E C IN 821 - 1N829 1N4565A - 1N4584A C om patible w ith u ltraso n ic and therm ocom pression lead bonding, scru b and eutectic preform die bonding.

20 KV capacitor bank wiring

Abstract: Asea low voltage protection relay
Contextual Info: Info-N o. ASEA INFORMATION RK 821-300 US, From/Date Reg. Page RFR, October 1972 5631 1 Ed. 2 Relay Division Type RXCN 4 Voltage regulating relay OUTSTANDING FEATURES A S tA , 8-721 S3 V ie te ria Sweden • Used for capacitor bank voltage control etc. •

Contextual Info: BU RR - BROW N ADS821 10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES • INTERNAL REFERENCE T he A D S 821 is a lo w pow er, m onolithic 10-bit, 40M H z an alog-to-digital converter u tilizin g a sm all geom etry

op082

Abstract: OPB821S7 0PB821 OPB821 OP140 OPB821S12 OPB821S5
Contextual Info: bTTflSflO 0000340 *1 OPTEK TECHNOLOGY INC OLE D O p to e le c tr o n ic *. D ivisio n T R W Electronic Components Group I I f Y I V Product Bulletin 5331 Janu ary 1985 T - M I -7 3 - Slotted Optical Switches Types O PB 821, O P B 8 2 1S 12 , O P B 8 2 1S 7, OPB821S5

irc820

Abstract: irf transistors IRF 820 i821
Contextual Info: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 IRF820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500

S15VD60

Abstract: 10kgcm S15VD 10 SHINDENGEN DIODE 150-10L
Contextual Info: S4E D SBINDENGEN ELECTRIC MFG • 821^ 307 0 0 00537 B IT « S H E J ■ W f t O U TL IN E DIMENSIONS S15VDD 600V 15A ■ RATINGS A b so lu te Maximum R atin g s * g ie ^ Item Sym bol S to ra g e Tem perature ig-S^ISiSJS O perating J u n c tio n Tem perature

FET IRF 540

Abstract: diode lt 823
Contextual Info: • ^DES?! 0DS40b3 HARRIS 741 ■ has IRF820/821/822/823 IRF82OR/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Featu res P ack ag e T O -2 2 0 A B • 2.2 and 2.5A, 450V - 500V T O P VIEW • rDS °n = 3-oii and 4.0il • Single Pulse Avalanche Energy Rated*

JRF820

Abstract: F820R
Contextual Info: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN

Contextual Info: B U R R - BROW N A D S 8 2 1 -iS ^ s s g ^ s - s - 1 0 -B it, 4 0 M H z A N A L O G -T O -D IG IT A L S a m p lin g C O N V E R T E R FEATURES DESCRIPTION • NO MISSING CODES The ADS 821 is a low power, monolithic 10-bit, 40MHz analog-to-digital converter utilizing a small geometry

diode S1G D9

Abstract: CERAMIC LEADLESS CHIP CARRIER 54F821 54F821LM 54F821SDM 74F821SC 74F821SPC J24F M24B N24C
Contextual Info: & D ecem ber 1994 54F /74F 821 10-Bit D -Type Flip-Flop General Description Features The ’F821 is a 10-bit D-type flip-flop w ith TRI-STATE true outputs arranged in a broadside pinout. The ’F821 is fu n c ­ tio na lly and pin com patible w ith th e A M D ’s A m 2 98 2 1 .

D2SB60

Abstract: NL JH SHINDENGEN DIODE D2SB40
Contextual Info: SHINDENGEN ELECTRIC MFG 54E D • 821*1367 0D0G4fc>3 420 ■ S H E J ■ O U T L IN E D IM E N S IO N S D2SBD 600V 1.5A ■ R A T IN G S $ê£iÜt:*;/ÈΧ * Absolute Maximum Ratings a i Item Sym bol S to ra g e T e m p e ra tu re S te S P f iS O pe ra tin g J u n c tio n T em p e ra tu re

EP-603 power supply

Abstract: EP-603 power supply circuit diagram
Contextual Info: ar y n i im prel iC-NZP P-TYPE LASER DIODE DRIVER Rev A1, Page 1 FEATURES APPLICATIONS ♦ Peak value controlled laser driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor

Contextual Info: ar y n i im prel iC-NZN N-TYPE LASER DIODE DRIVER Rev A1, Page 1 FEATURES APPLICATIONS ♦ Peak value controlled laser diode driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor