GG173 Search Results

Contextual Info: ¿>24^02^ GG17331 02T • MITSUBISHI RF POWER MODULE M67705UL 380-400MHZ, 9.6V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 r ¥ 1/Î o -H IT D (g) (D (Í 0.4 ± 0.2 5±1 9±1 9±1 5±1 PIN : ©Pin

Contextual Info: • SS1Û4L>Ô GG17322 3 Final Electrical Specifications r r LTC1555/ LTC1556 SIM Power Supply and Level Translator TECHNOLOGY u n m June 1997 K m U ftC S DCSCRIPTIOD ■ Step-Up/Step-Down Charge Pump Generates 5V ■ Input Voltage Range: 2.7V to 10V ■ Output Current: 10mA Vm ^ 2.7V

Contextual Info: INTERNATIONAL RECTIFIER 4Ö55452 0017370 bSE D PD-2.253 International S Rectifier i 53c m q . s e r ie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Features 153CMQ. Units Characteristics lF AV Rectangular The 153CMQ isolated, center tap Schottky rectifier module

CXP5034

Contextual Info: CXP5084/5086 SONY. CMOS 4-bit Single Chip Microcomputer Description The C X P 5 0 8 4 / 5086 is a C M O S 4 -bit microcomputer which consists of 4-bit CPU, ROM, RAM, I / O port, 8-bit timer, 8-bit tim er/ counter, 18-bit time base timer, 8-bit serial I/O,

Contextual Info: What H EW LETT 1 "rim P A C K A R D SERCOS Fiber Optic Transmitters and Receiver Technical Data HFBR-0600 Series controlled machines. The SERCOS interface specification was written by a joint working group of the VDW German Machine Tool Builders Association and ZVEI

Contextual Info: CXP5070 SONY. CM O S 4-bit 1 Chip Microcomputer Piggyback type Description CXP5070 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP5076/CXP5078. Features • Instruction cycle

Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology.

ati exm 321

Abstract: sd 7401 xlxxxx DSP1610 TMs 1122 AB14 DSP1618 CXR 726 Microprocessor 100-BQFP aop 741
Contextual Info: AT&T Data Sheet May 1995 •= ? ■Microelectronics DSP1618 Digital Signal Processor 1 Features ■ Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

M37413M6-XXXFP

Abstract: M37413M6H DG17351
Contextual Info: niTSUBISHKMICMPTR/MIPRC bl E J> bEM'IÔEÛ D G 17 31 ñ 70T « 1 1 1 1 4 M ITSUBISHI M ICROCOM PUTERS PRELIMINARY M 37 41 3 M 4 H X X X F P M 3 7 4 1 3M 6H X X X F P M 3 7 4 1 3 M 6 H X X X F P ) SIN G LE-C H IP 8-BIT CMOS M ICROCO M PU TER DESCRIPTION T h e M 3 7 4 1 3 M 4 H X X X FP Is a sin g le -c h ip m icro co m p uter d e ­

M67703

Contextual Info: □017324 m m MITSUBISHI RF POWER MODULE M67703UH 470-490MHZ, 12.5V, 50W, FM MOBILE RADIO BLOCK DIAGRAM CD—II—[^ !> — II— [^ b > — II— PIN : Pin : RF INPUT © V c c i : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ® PO : RF OUTPUT ® G N D : FIN

Contextual Info: 35E D • 023^320 0017305 0 « S I P SIPMOS P Channel MOSFET SP0610T SIEMENS/ SPCL-. SEMICONDS _3.5" • SIPM OS - enhancement mode • Drain-source voltage Voi = -60V • Continuous drain current I D = -0.13A • Drain-source on-resistance

Contextual Info: OKI Semiconductor MSM5117100_ 16,777,216-Word x 1-Bit DYN A M IC R A M : FAST PAG E M O D E TYPE D E S C R IP T IO N The MSM5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: PRELIMINARY IDT7016S/L HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Military: 25/35ns max. — Commercial:15/17/20/25/35ns (max.)

62703-F

Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Contextual Info: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure

M5M27C256K

Abstract: 28K4
Contextual Info: bl E D • bSMTflSS 0017330 SbH ■ D I T I M M 5 MITSUBISHI LSIt 2 C 7 2 5 6 K , - 1 , 2 - 1 5 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W O R D BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM MITSUBISHI (MEMORY/ASIC) DESCRIPTION PIN CONFIGURATIO N (TOP VIEW)

LH28F008SC

Abstract: wbae
Contextual Info: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage F la s h F ile MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Erasable Blocks ■ High-Performance

Contextual Info: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • Interrupt Flag • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling between ports • Fully asynchronous operation from either port

Contextual Info: INTERNATIONAL RECTIFIER bSE » H 4055452 D0173bb T33 • INR PD-2.276 International I^ r|Rectifier 152CMQ030 SCHOTTKY RECTIFIER 150 Amp Description/Features Major Ratings and Characteristics 152CMQ030 Units Characteristics ' f av Ractan9ular waveform 150

tektronix p6019

Abstract: 17344 rca RCA-TIP125 equivalent of TIP122 RCA Solid State amplifier TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT p6019 TIP127 equivalent TIP120 TIP122
Contextual Info: QÏ 3875081 G E SOL ID dF | STATE Darlínglon Power Translstors 3fl7S0ñl 0D17342 0 |~~ 01E 17342 TIP125, TIP126, TIP127 File Number 997 8-A m pere P-N-P Darlington Power Transistors - 6 0 , - 8 0 , and - 1 0 0 Volts, 6 5 Watts