DD173 Search Results

Contextual Info: MITSUBISHI RF POWER MODULE b 2 H tì f i 5 tì DD1734b SSD • M67709UL 335-350MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : P in : RF INPU T © V C C I : 1st, DC SUPPLY @VBB : BASE BIAS SUPPLY V C C 2 : 2nd. DC SUPPLY ®Po : RF O UTPUT ® G N D : FIN

M67705l

Contextual Info: b 2 4 ci fl Stí DD1733E Thb • MITSUBISHI RF POWER MODULE M67705L 400-430MHZ, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 Z . ¥ o _ +1 01 4>0 .4 ± 0.2 5 ±1 9+1 9+ 1 P IN : 5 + 1 8 .5 + 1 P in

"SERIES MELPS 740"

Abstract: MELPS740 M3742 80P6N M37428RFS MELPS 740 MELPS-740 mcl plp cd controller M37428
Contextual Info: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.

2N5296 RCA

Abstract: 2n5296 transistor RCA-2N5294 rca 2N5298 2N5296 2N5298 2N5294 KC140 92CU-402B2 regulator ic 2n5294
Contextual Info: üï 3875081 G E S O L I D S T A TE General-Purpose Power Transistors DE 1 3 f l 7 5 0 f l l DD173flD 7 01E D 17380 ~ 7~~3 3 —/ f 2N5294, 2N5296, 2N5298 File Number 322 Silicon N-P-N Transistors

Contextual Info: MITSUBISHI RF POWER MODULE bEH'iôST DD173SD Tfll • M67709M 390-430MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : Pin © VCCI @ V8B VCC2 ®PO ®G ND RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25'C unless otherwise noted

Contextual Info: DD1737S b4P • MITSUBISHI RF POWER MODULE M67723H 276-284MHZ, 7.2V, 1.5W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45 ± 1 42 t1 2 - R 1 . 5 ± 0 .3 & ■€ 2> _ ir» o -H o> g h k £>- <S> (D 0 0 .4 ± 0.2 5±t 9± 1 9± 1 5±1

Contextual Info: TOSHIBA {DISCRETE/OPTO} ~TÏ DE § ^ 0 ^ 7 2 5 0 99D 17334 9097250 TOSHIBA DISCRETE/OPTO DD17334 DT'^^I TPS606 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . TAPE, CARD READERS . POSITION SENSOR . Spectrally and Mechanically Matched with IR Emitter

Contextual Info: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.

IRF830

Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re

RCA9202C

Abstract: ignition tci TCI ignition RCA*9202A RCA9202A RCA9202B
Contextual Info: ~G E SOLID STATE- 3875081 G E ‘ SOLID — STATE — " """ 3a7SDfll 01E 17315 D DD1731S r - 3 3 *2 ? Darlington Power Transistors F ile N u m b e r 1414 RCA9202A, RCA9202B, RCA9202C

M57796H

Contextual Info: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B

Contextual Info: PRELIMINARY C Y 7C 374i UltraLogic 128-Macrocell Flash CPLD Features • • • • 128 macrocells in eight logic blocks 64 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology — JTAG interface • Bus Hold capabilities on all l/Os and dedicated inputs

UPD1714G

Abstract: KS1160 DH 7177 lf324 upd1714 EVAKIT-1700 RN3A
Contextual Info: ~ NE C ELECTRONICS INC Tfl d F | L4275E5 QQ173SÌ. 3 | T~77'0$-0$ V UPD1714G Internal Prescaler, PLL synthesizer, and LCD driver Microcontroller The UPD1714G is a 4-bit CMOS microcontroller with prescaler t hat can input up to 150 MHz, PL L synthesizer, and 1/2 duty, 1/2

Contextual Info: INTERNATIONAL RECTIFIER 4Ö55452 0017370 bSE D PD-2.253 International S Rectifier i 53c m q . s e r ie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Features 153CMQ. Units Characteristics lF AV Rectangular The 153CMQ isolated, center tap Schottky rectifier module

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

Contextual Info: CXP507001 SONY Piggyback type CM OS 4-bit Single Chip Microcomputer Description The CXP50700 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP50712/CXP50716. 80 pin PQFP Ceramic

CXP5034

Contextual Info: CXP5084/5086 SONY. CMOS 4-bit Single Chip Microcomputer Description The C X P 5 0 8 4 / 5086 is a C M O S 4 -bit microcomputer which consists of 4-bit CPU, ROM, RAM, I / O port, 8-bit timer, 8-bit tim er/ counter, 18-bit time base timer, 8-bit serial I/O,

Contextual Info: b E m fle i D G1736L. 137 _ • MITSUBISHI RF POWER MODULE M67732 1240-1300MHZ, 7.2V, 1W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 45±1 42 ± 1 2 - R 1 . 5 ± 0 .3 z ; _ o <T> ¡S0.4 ± 0.2 PIN : 5+ 1 9±1 9+ 1 5 + 1 8 .5 + 1 P in : RF INPUT

UPD1719G

Abstract: T-77 US281AS1700 SE-1700
Contextual Info: N E C ELECTRONICS INC Tfl dF|L:42752S 0D173S3 t D 7 ~ 7 '7 - 0 S '- 0 S UPD1719G Internal Prescaler, PLL Synthesizer, and LCD driver Microcontroller The uPD1719G is a 4-bit CMOS microcontroller with'prescaler that can input up to 150 MHz, PLL synthesizer, and 1/2 duty, 1/2

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.