MX16BI Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 2 9 -1 E MEMORY 4 x 1 Mx16BI T SYNCHRONOUS DYNAMIC RAM M B 8 1 1 6 4 1 6 4 2 A -1 2 5 /-1 0 0 /-8 4 /-6 7 /-1 2 5 L /-1 0 0 L /-8 4 L /-6 7 L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .

Contextual Info: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6

Contextual Info: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW /CWG to KMM5361203C2W /C2W G caused by PCB revision .

Contextual Info: DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361205CW /CWG to KMM5361205C2W /C2W G caused by PCB revision .

Contextual Info: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW /CWG to KMM5361203C2W /C2W G caused by PCB revision .