002IM Search Results

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

MBM29LV002B

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-1 0.-12/M BM29LV002B-10-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

Contextual Info: MEMORY CMOS 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CM OS 2-Bank of 262,144-W ord x 32-Bit Synchronous Graphic Random Access M em ory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20863-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002TC-70-90-12/MBM29LV002BC-70 90-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: cP FUJITSU DS06-8010-1E . DATA SHEET ASSP IF Band PLL Frequency Synthesizer M B 15S 00 S e r ie s • DESCRIPTION The Fujitsu MB15S series is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency synthesizer with pulse swallow operation. It can operate maximum at 300MHz.

29f002t

Contextual Info: ADVANCED INFORMATION ly p a c MX29F002/002N 2M -B IT [256K x 8] C M O S F L A S H M E M O R Y FEATURES • 2 6 2 ,1 4 4 x 8 only • Fast ac cess tim e: 4 5 7 5 5 /7 0 /9 0 /1 2 0 n s *p le a s e refer • to A C /D C characteristic table Low pow er consum ption

256x16* STATIC RAM

Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
Contextual Info: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 2 9 -1 E MEMORY 4 x 1 Mx16BI T SYNCHRONOUS DYNAMIC RAM M B 8 1 1 6 4 1 6 4 2 A -1 2 5 /-1 0 0 /-8 4 /-6 7 /-1 2 5 L /-1 0 0 L /-8 4 L /-6 7 L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory