MV2112
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207
|
OCR Scan
|
mv2101mv2115mv2201mv2215+6mv2102mv2103mv2104mv2105mv2106mv2112
|
PDF
|
MV2107
Abstract: BV2108 MV2113 BV-2108
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02
|
OCR Scan
|
mmbv2101lmmbv2109lmv2101mv2115+6o-236abot-23mv2107bv2108mv2113bv-2108
|
PDF
|
MV2115 TO-92
Abstract: mv2115
Contextual Info: Abrupt Tuning Varactor MV2115 Series DESCRIPTION The MV2115 abrupt tuning varactor provides an extremely high Q and low series resistance. It is packaged in the TO-92 package. Features • TO-92 High Q Maximum Ratings Rating Limits Units VBR V Operating Temperature, TOPR
|
Original
|
mv2115ct2v/ct30vmv2115 to-92 |
PDF
|
MV2110
Abstract: MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode
Contextual Info: MV2101 SILICON thru MV2115 v v c - W IV O LTA G E -V A R IA B LE CAPACITANCE DIODES 6 .8 -1 0 0 p F 30 V O L T S SILICON EPICAP DIODES . . . designed in the popular P L A S T IC P A C K A G E for high volume requirements of FM Radio and T V tuning and A F C , general frequency
|
OCR Scan
|
mv2101mv2115mv2110mv2109 positive lead+7dioda bridgemv2112diode cqmv2102mv2103mv2107mv2110 diode
|
PDF
|
mv2109 varactor
Abstract: MV2107 MV2104 MV2112 MV2113 MV2201 MV2110 Knox Semiconductor mv2110 MV2102 MV2105
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER CAPACITANCE @ - 4 Vdc 1 MHz pF MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz CAPACITANCE RATIO C-2V / C*30V MIN CAPACITANCE RATIO C -1V /C -10V
|
OCR Scan
|
mv2109 varactormv2107mv2104mv2112+6mv2113mv2201mv2110knox semiconductor mv2110mv2102mv2105
|
PDF
|
MV2201
Abstract: V2103 V2209
Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV22I5 TYPE N U M BER CA PACITANCE @ - 4 Vdc 1 M H z pF M IN QUALITY FACTOR Q @ - 4 Vdc f = 50 M H z CA PA C ITA N C E RATIO C*2V / C-30V MIN MV2101
|
OCR Scan
|
mv2101mv2115mv2201mv22i5+5v2103v2105v2108v2113v2209
|
PDF
|
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
|
Original
|
sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
|
PDF
|
E142 wafer format
Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
Contextual Info: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001 SCILLC, 2001 Previous Edition 2000 “All Rights Reserved”
|
Original
|
dl140/djan-2001r14525e142 wafer format+9hel32mr 4710 ic300w power amplifier circuit diagramhel05klt22hel12 hel31hel16hlt22hlt28
|
PDF
|
MV2215
Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso
|
OCR Scan
|
do-204aa1n5441amv16201n5442a+12mv16221n5443amv16241n5444amv16261n5445amv2215mv2112mv2201mv838mv2213mv2114
|
PDF
|
MV109
Abstract: BB105 MV2104 MV104G MV1662 MV1662-2 BB105A MV1404 MV2102 MV2114
Contextual Info: FM Radio Abrupt and TV Hyper-Abrupt Tuning . . . designed fo r use in V H F and U H F tuners and FM radio, providing solid-state reliability in replacement o f mechanical tuning methods. A /" Device Type BB105B BB105G BB105A MV104 MV104G MV109 MV209 MV1401
|
OCR Scan
|
bb105bbb105gbb105amv104+13mv104gmv109mv209mv1401do-14mv1403bb105mv2104mv1662mv1662-2mv1404mv2102mv2114
|
PDF
|
MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
|
OCR Scan
|
06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
|
PDF
|
transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
|
Original
|
transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
|
PDF
|
BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
|
Original
|
mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram
|
PDF
|
MV2104
Abstract: MV2101 MV2111 MV2115 MV2105 MMBV2109
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability
|
Original
|
mmbv2101lt1mmbv2103lt1mmbv2105lt1mmbv2107lt1+10mmbv2108lt1mmbv2109lt1mv2101mv2104mv2106mv2108mv2111mv2115mv2105mmbv2109
|
PDF
|
|
|
BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
|
Original
|
msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
|
PDF
|
V2101
Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
|
OCR Scan
|
mmbv2101lt1/dot-23mmbv2101lt1mmbv2103lt1+10mmbv2105lt1mmbv2107lt1mmbv2108lt1mmbv2109lt1mv2101v2104v2101diode mv2105sot23 package diodesmv2105* equivalent
|
PDF
|
1200 ohm RESISTOR
Abstract: CT075 1648l C1648
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA V oltage Controlled O scillator M C1648 Consider MC12148 for New Designs The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance Q|_ a 100 at Frequency of Operation.
|
OCR Scan
|
mc12148mc16480-35p10mhz+7470pf24-200pfi-10k1200 ohm resistorct0751648lc1648
|
PDF
|
stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
|
Original
|
bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
|
PDF
|
BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
|
Original
|
sc-70/sot-323spa218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642bc237level shifter 2n54012771 040 0002mun5214t1
|
PDF
|
bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
|
Original
|
bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
|
PDF
|
transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
|
Original
|
bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
|
PDF
|
BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
|
Original
|
mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
|
PDF
|
bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
|
Original
|
bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
|
PDF
|
transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
|
Original
|
mmbd914lt1236abde218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640transistor mps5771bc237bfw4
|
PDF
|
