MURATA LOT NO Search Results

Contextual Info: [AK1228] AK1228 10~2000MHz Low Noise Mixer 1. General Description AK1228 is a high linearity and low noise mixer. Signal input frequency range coverage is from 10 to 2000MHz and output coverage is from 10 to 1000MHz. AK1228 can be driven by a single ended signal input

GRM1882C1H100JA01D

Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V

taiyosya

Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.

maxim 2150

Abstract: GRM36cog MAX2323 MAX2325 UMK105CH101JW G1157 Taiyo 93-7
Contextual Info: 19-1736; Rev 0; 7/00 Triple/Dual-Mode CDMA LNA/Mixers _Features The MAX2323/MAX2325 are low-noise amplifier LNA plus mixer ICs optimized for code-division multiple-access (CDMA) applications in both cellular and PCS bands. The

AK1228

Abstract: AK2360A
Contextual Info: [AK1228] AK1228 10~2000MHz Low Noise Mixer 1. General Description AK1228 is a high linearity and low noise mixer. Signal input frequency range coverage is from 10 to 2000MHz and output coverage is from 10 to 1000MHz. AK1228 can be driven by a single ended signal input

Taiyo 93-7

Abstract: MAX2323 MAX2325 UMK105CH101JW
Contextual Info: 19-1736; Rev 0; 7/00 Triple/Dual-Mode CDMA LNA/Mixers _Features The MAX2323/MAX2325 are low-noise amplifier LNA plus mixer ICs optimized for code-division multiple-access (CDMA) applications in both cellular and PCS bands. The

Taiyo 93-7

Abstract: UMK105CH101JW G1157 MAX2323 MAX2325 CAP 0402 MAXIM 0764
Contextual Info: 19-1736; Rev 0; 7/00 Triple/Dual-Mode CDMA LNA/Mixers _Features The MAX2323/MAX2325 are low-noise amplifier LNA plus mixer ICs optimized for code-division multiple-access (CDMA) applications in both cellular and PCS bands. The

BLM15AX

Abstract: bead 1005 BLM15 murata chip suppression filter BLM15AG
Contextual Info: Murata’s Ferrite Bead Makes for Optimal Anti-Noise Device The company has developed a unique material and made improvements in the conventional process to achieve a chip ferrite bead with 60 percent lower DC resistance. T he increasing penetration rate of

XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••

RD01MUS2

Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V

gp 542

Abstract: GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 RD05MMP1 GRM1884C1H1R0CZ01 GRM1882C1H151JA01
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-030-A Date : 25th Sep. ‘07 Rev.date : 30th Jun. 2010 Prepared : H. Sakairi S. Kametani Confirmed SUBJECT: : T.Okawa RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V

GRM2162C

Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V

mark A15 sot-23-6

Contextual Info: R5326x SERIES Automatic Mode Shift 2ch 150mA LDO NO.EA-138-061102 OUTLINE The R5326x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low supply current

GRM1882C1H

Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz

Contextual Info: AWB317 AWB317 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB317 a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

MYGTM01210BZN

Abstract: mygtm01210 50ZL1000M EKZE160 Nippon capacitors
Contextual Info: MYGTM01210BZN Application 1 DC-DC Converter Application Manual MYGTM01210BZN 1. Features ･Single output/SIL/non-isolated type DC-DC converter with high power 120W . ･High efficiency and small size have been achieved. ･Wide input range（17.0V to 40.0V）.

Contextual Info: AWB512 AWB512 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB512, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

350-400MHZ

Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V

Contextual Info: AWG2017 AWG2017 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG2017, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiber and transmitter of

Contextual Info: AWG3017 AWG3017 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3017, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of

Contextual Info: AWG3015 AWG3015 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3015, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiber and transmitter of

Contextual Info: AWB519 AWB519 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB519, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

GRM2162C1H180JZ01D

Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V

Contextual Info: AWG2023 AWG2023 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG2023, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiber and transmitter of