MUR120 SMD
Abstract: do213ab BA 508 C0 mur120 DO-213AB MUR130 MUR140 MUR150 BKC Semiconductors
Contextual Info: Fast Recovery MUR120 1 Amp Rectifiers thru MUR150 Use Advantages These power rectifiers are used in fast switching, high efficiency applications. Competitive glass replacement for plastic DO-41 rectifiers. Particularly usefulin swîtchingreguÉtorpower supplies.
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mur120mur150do-41ll-41+7do-213abmur130mur140mur120 smddo213abba 508 c0bkc semiconductors
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BKC Semiconductors
Abstract: MUR120 SMD
Contextual Info: Fast Recovery 1 Amp Rectifiers MUR120 thru MUR150 Use Advantages These power rectifiers are used in fast switching, high efficiency applications. Competitive glass replacement for plastic DO-41 rectifiers. Particularly useful in switching regulator power supplies.
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mur120mur150do-41ll-41+3do-213abbkc semiconductorsmur120 smd
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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mr852
Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120lt3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr852diode mur410ba 5904 a f prs1g footprint wave solderingmur460 blmur1650byv1945murs160t3 smbmbrd360transistor 534
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MUR420 diode
Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal
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mbrm140t3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur420 diodemur860 equivalentdiode 31dq06mr760 diodeusd745c equivalent1n5186gp1n2069diode marking bcjp600kses5001 cross reference
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diode A14A surface mount
Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
Contextual Info: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling
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mbrd620ctmbrd630ctmbrd640ctmbrd650ct+13mbrd660ctvhe205vhe210diode a14a surface mountses5001 diodea14f diodemur120 equivalent diodediode a14a surfaceapplication diode 1n5406bc 536pr3002 diodembrd3606a10 bl diode
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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mbrb1045vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1650t4 sod-123 1n4004mr25101n2069ses5001mur420 equivalentct pr1504equivalent for fr302 diodemur 460 switchdiode a14a surface mount
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A14F diode
Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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murs220t3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605a14f diodediode marking es2dv352dc "transient voltage suppressordiode a14arg3j 005sr10020010c357d-011n2069
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045wtvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605equivalent components of diode 1n5399diode ses50016a10 bl diodeequivalent for fr302 diodeequivalent components of diode her104fe8b diodefe8dgi756 diodea14f diodemur420 diode
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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mbrp60035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605fe16bmbr3045pt transistorfr102 sod-1231n4007 sod-123byv43-45byv19-45mur1660ct equivalentmur460 blfep16dt 0032mur420 equivalent
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transistor U1620R
Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave
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mur1620ctrmur1620ctvhe205vhe210+16vhe215vhe220vhe2401vhe2402vhe2403vhe2404transistor u1620rfast recovery diode ses5001mur1620ct equivalentpk mur 460 diodepk mur 460transistor mbr4045pt1n2069mbrd360fast recovery diode, 24 amperes, 600 volts, button typestps20h100
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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mbr340vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605pk mur 460pk mur460pk mur460 1110gi756 diodecarrier 30bq015usd11200525 transient voltage suppressorsdiode a14a surfacess14 sod123mbrd360
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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MUR120 SMD
Abstract: MUR150 mur120 DO-213AB MUR130 MUR140 BKC Semiconductors SFC7
Contextual Info: Fast Recovery 1 Amp Rectifiers M U R 120 thru MUR150 Use Advantages These power rectifiers are used in fast switching, high efficiency applications. Competitive glass replacement for plastic DO-41 rectifiers. Particularly useful in switching regulator power supplies.
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mur120mur150do-41ll-41+6do-213abmur130mur140mur120 smdbkc semiconductorssfc7
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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dl151/dnov-2000r14525u840 diode motorola+9motorola u860 diodediode u1560b2045 akau1560 diodeu860 diodeu1560diode u3ju820 diodefast recovery diode ses5001
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SMD DIODE UF4007
Abstract: DO-204AC DO204AC uf4007 PACKAGE DO-214AA diode MUR120 SMD smcj15a TO-269AA MBS uf5408 SMD diode UF5408 DIODE DO-214AB
Contextual Info: Transient Voltage Suppressors, Recovery Rectifiers and Bridge Rectifiers 25 TRANSZORB Transient Voltage Suppressors Plastic Axial 1.5KE Series Semiconductors, IC Adapters, Crystals & Oscillators • Vishay P6KE Series Stock No. 950-4004 950-4018 950-4006 950-4022
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do-204acdo-15smd diode uf4007do204ac+7uf4007 package do-214aa diodemur120 smdsmcj15ato-269aa mbsuf5408 smd diodeuf5408 diodedo-214ab
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RDK-193
Abstract: LNK406EG lnk606 LNK306PN LNK605DG LNK405EG lnk306dn LNK457DG LNK604 LNK406
Contextual Info: 11 FL1 MBR VR1 1.5KE200A Product Selector Guide LED Driver Products 1 FL2 3 D3 UF4007 15 2 October 2010 D4 SB3100 D h-PH V D5 SS14 R5 3.01 kΩ 1% CONTROL EG S FB R4 49.9 kΩ 1% T1 RM8 BP R6 162 kΩ 1% BA Q3 MMBT3904 R C4 10 µF 16 V R19 1.00 kΩ 1% C13
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5ke200auf4007sb3100mmbt3904+11zmm5259b-7rdk-193lnk406eglnk606lnk306pnlnk605dglnk405eglnk306dnlnk457dglnk604lnk406
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CTX12S
Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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sgrect/0802ctx12sctx12slbyv255-200+7w210piv400schottky barrier rectifier 40a 15v mbr4015lwtsmd schottky diode a2 sod-123byv10-40 pspicew210piv-400shottky barrier diode 100v 100abyv52-200 equivalent
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inverter 12v to 220 ac mosfet based
Abstract: 74hc14 philips 2N7002 N-CHANNEL MOSFET PHILIPS MARKING siemens bat54 transistor irf620 motor driver full bridge 6A LT1693 a1693 lt1339 application note BS170
Contextual Info: LTC1693 High Speed Single/Dual N-Channel MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1693 family drives power N-channel MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance.
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ltc1693ltc1693-1lt1161ltc1163+13lt1339ltc14351693fainverter 12v to 220 ac mosfet based74hc14 philips2n7002 n-channel mosfet philips markingsiemens bat54transistor irf620motor driver full bridge 6alt1693a1693lt1339 application notebs170
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LTC1154
Contextual Info: LTC1693 High Speed Single/Dual N-Channel MOSFET Drivers FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1693 family drives power N-channel MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance.
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ltc1693ltc1693-1nonilt1161ltc1163+4lt1339ltc14351693faltc1154
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