MT58C1 Search Results

Contextual Info: u ild R O N 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS I FEATURES • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

Contextual Info: MICRON 16K SYNCHRONOUS SRAM X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

5550H

Abstract: Bos 6K
Contextual Info: MICRON TECHNOLOGY INC SSE D • b l l l S 4 cî GOGS'ìb'l TS7 URN MT58C1618 DIE 1ÔK X ¡8 SYNCHRONOUS SRAM f f lI C R D M MILITARY SRAM DIE 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • DIE OUTLINE Top View Fast access times: 20,25 and 35ns

Contextual Info: M IC R O N 16K X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 12,15, 20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply

synchronous sram

Abstract: mt58c1289dj MT58C1289
Contextual Info: v/iic z r o n MT58C1289 128K X 9 SYNCHRONOUS SRAM 128K x 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast access times: 16.6 and 20ns Fast clock to data valid: 10ns Single +5V ±10% power supply

Mil-Std-883 Wire Bond Pull Method 2011

Contextual Info: AUSTIN SEMICONDUCTOR INC büE D • TG02117 0000375 ifl? H A U S T 1 MT58C1616 DIE 16K X 16 SYNCHRONOUS SRAM | u iic = n o N - ■ ' P M W . ' ì - ' S MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES •

jc 817

Abstract: ir 0588 0588 N1H1
Contextual Info: niCRON SEMICONDUCTOR INC b?E hi 1 1 5 ^ D 000^7^3 MRN S11A I 128K X 9 SRAM DIE | M IC R O N SEMICONDUCTOR tSC M 073 • SRAM DIE 128K X 9 SRAM Asynchronous MT5C1189S11A and Synchronous (MT58C1289S11A) GENERAL PHYSICAL SPECIFICATIONS • Wafer thickness = 18.5 mils ±0.5 mils

Contextual Info: MICRON SEM ICO NDUCTOR INC M IC R O b7E D • b l l l S ^ □□□'ÌS31 TbM ■ URN MT58C1289 128K X 9 SYNCHRONOUS SRAM N SYNCHRONOUS 128K x 9 SRAM CD AM o n A M VI FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast cycle times: 12,16.6 and 20ns

jmicron

Abstract: MT58C1
Contextual Info: SSE D MICRON TECHNOLOGY INC IC R O N • b l l i s m 0005^53 LIT 16K X IPIRN MT58C1616 DIE 16 SYNCHRONOUS SRAM -T MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 20,25 and 35ns

synchronous sram

Abstract: 05t cr
Contextual Info: MICRO N T E C H N O L O G Y INC S5E D M IC R O N • b i l l 54*1 D D D 3 b 3 T 7T2 « M R N 128K X MT58C1289 9 SYNCHRONOUS SRAM 128K X 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast access times: 16.6 and 20ns

MT58C161B

Contextual Info: I^ IC R O N MT58C1618 SYNCHRONOUS SRAM 16K X 18 SRAM I WITH CLOCKED, REGISTERED INPUTS • • • • • • • • Fast access times: 15, 17, 20 and 25ns Fast O utput Enable: 6, 7, 8 and 10ns S in gle+5V ±10% pow er supply Separate, electrically isolated output buffer pow er

LT 5251

Abstract: synchronous sram wns marking
Contextual Info: MICRON 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power

Contextual Info: MICRON TECHNOLOGY INC SSE » M IC R O N • blllSMT OQG3b4T b31 H M R N MT58C1616 16K X 16 SYNCHRONOUS SRAM 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5,6,8 and 10ns

el 803

Contextual Info: A U S T IN SEMICONDUCTOR IN C hQZ D T 0 0 5 1 1 7 OOGOS^O 1R3 « A U S T M T 5 8 C 1 6 1 8 D IE 1 6K X 18 S Y N C H R O N O U S S R A M MICRON T MILITARY SRAM DIE 4 f c - Z .V & 16K x 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • •

Contextual Info: MICRON TECHNOLOGY INC 7 36E D • b l l l S M 11! 0 0 0 2 ^ 2 1 , pi h i i in11 jjgiy iip.j“1v .ut*. w j' i. w - mT Wjgri 1 HHRN ADVANCE 11 7 = V 6 > 2 3 -W 16K X 18 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS >V >.-. < FEATURES • • • •

Contextual Info: • h ÉidMiuiilBHááttaSflÉ BflE D MICRON TECHNOLOGY INC b llIS H T G G O E Tll =i ■ MRN ADVANCE ÉtaB*6â*ù^ÂeeÂfcâi - uMMüff T4C-2Z-/< 16K X 16 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS FEATURES • • • • OPTIONS MARKING « Timing

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

Contextual Info: ADVANCE |U|ICRON M T58C 1289 FULLY REGISTERED INPUTS AND OUTPUTS FEATURES • • • • • • • • Timing specific to SPARC'"' microprocessor Fast access times: 16.6 and 20ns Fast clock to data valid: 10ns Single +5V ±10% power supply READ data and WRITE data registers

T58C

Contextual Info: |U |IC R O N M T58C 1616 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 1 5 ,1 7 ,2 0 and 25ns Fast O utput Enable: 6, 7, 8 and 10ns Single +5V ± 1 0 % pow er supply

mt42C4256z

Abstract: MT4C1024DJ
Contextual Info: ADVANCE M IC R O N • MT4C10016/7 Tí CMNCX ClGV INC DRAM 16 MEG x 1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%