DQ16C Search Results

Contextual Info: IBM14N1372 IBM14N3272 IBM14N6472 High Perform ance SRAM Modules Features • 256K, 512K, and 1MB secondary cache module family using Synchronous and Asynchronous SRAMs. • Organized as a 32K, 64K, or 128K x 72 package on a 4.3” x 1.1”, 160-lead, Dual Read-out DIMM

Contextual Info: JÊL S» 1993 ADVANCE M IC R O N I .w r ^ w . ^ MT58LC64K18B2 64K x 18 SYNCHRONOUS SRAM SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • Fast access times: 9 ,1 0 ,1 2 and 17ns

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M

Contextual Info: GMM77332280CSG-5/6 LG Semicon Co., Ltd. 33,554,432 W ORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 77332280CSG is an 32M x 72 bits Dynamic RAM MODULE w hich is assem bled 36 pieces o f 16M x 4bit DRAM s in 32 pin SOJ package, tw o 16bit driver ICs in 48pin TSSOP

Contextual Info: M K31VT464-10YE 98.07.24 Semiconductor M K 3 1 V T 4 6 4 -1 0 Y E 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK):_ DESCRIPTION The Oki MK31VT464-10YE is a fully decoded, 4,194,304 x 64bit synchronous dynamic random access memory composed of four 64Mb DRAMs (4Mx16) in TSOP packages

Contextual Info: HY UN DA I 64K X HY6718100/101 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x 18 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge

Contextual Info: MEMORY CMOS 2 x 128K x 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CM OS 2 BANKS OF 131,072-W O RDS x 32-BIT SYN CH R O N O U S GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • blllSM S 000057=5 T4 4 « U R N ADVANCE MICRON ■ 64K KMICOMDUCTOR MC SYNCHRONOUS SRAM M T58LC 64K 18F5 X 18 SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • •

Contextual Info: unir n «i nim ii i mui i iiiij.j.m u i.HHiHnj; MICRON TECHNOLOGY INC b lllS H T 3flE D QG0SÖ73 S • MRN ADVANCE T 'H L -2Z - H 16K x 16 SRAM SRAM WITH A D D R E SS / DATA INPUT LATCHES a FEATURES • • • • • • • • • PIN A SSIG N M EN T Top View)

DQ12E

Contextual Info: = = PreMmlnary IBM041814PQK 64K X 18 B U R S T SRAM Features • 64K x 18 Synchronous Burst Mode SRAM • 5 V Tolerant I/O • 0.5fi CMOS Technology • Asynchronous Output Enable • Synchronous Burst Mode ot Operation Compati­ ble with PowerPC Processors

diagram power supply LG 32 lh 35 fr

Contextual Info: ADVANCE M IC R O N MT58LC64K18B2 6 4 K x 18 SYNCHRONOUS SRAM I SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • Fast access times: 9 ,1 0 ,1 2 and 17ns Fast OE: 5 ,6 and 7ns

i486 sx

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67B518 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B518 is a 589,824 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

Contextual Info: M I CR ON T E C H N O L O G Y INC 3 SE » • bill 5 4*1 ODDEflfl? S ■ M R N ? = V á ~ 2 l-l¿ J 16K X 18 SRAM SRAM WITH ADDRESS / DATA INPUT LATCHES FEATURES • • • • • • Fast access times: 15,17,20 and 25ns Fast output enable: 6,8 and 10ns

8a85

Contextual Info: MOTOROLA Order this document by MCM67M618A/D SEMICONDUCTOR TECHNICAL DATA MCM67M618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Tim ed Write The MCM67M618A is a 1,179,648 bit synchronous static random access

Contextual Info: ADVANCE M IC R O N • MT58LC64K18F5 64Kx 18 SYNCHRONOUS SRAM SYNCHRONOUS SRAM 64Kx 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • • • • • • • • • • Fast access times: 9 ,1 2 and 15ns Fast OE: 6 ,7 and 8ns

X28C010

Contextual Info: Advance Information im XM28C4096 4Megabit Module 256KX 16 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • High Density 4 Megabit 256K x 16 E2PROM Module • Low Power CMOS technology - A c tiv e -L e s s than 100mA -S ta n d b y -L e s s than 2mA

Contextual Info: IBM14N1372 IBM14N6472 H ig h -P erfo rm an ce S R A M M odules Features • 256K, 512K, and 1MB secondary cache module family using Synchronous and Asynchronous SRAMs. Fast access times: 9 and 11 ns using SSRAM; 12ns using ASRAM Byte Parity • Organized as a 32K, 64K, or 128K x 72 package

Contextual Info: ADVANCE IM ICRO N v MT58LC64K18F5 fidK cdam 64K X 1ft 18 CVNCHRONGIJR SYNCHRONOUS SRAM SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • • • • • • • • • • Fast access times: 9 ,1 2 and 15ns

Contextual Info: MICRON TECHNOLOGY INC SSE » M IC R O N • blllSMT OQG3b4T b31 H M R N MT58C1616 16K X 16 SYNCHRONOUS SRAM 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5,6,8 and 10ns

SKC-12

Contextual Info: ADVANCE MICRON iH -n w i^ I ß 4K 64K SYNCHRONOUS SRAM MT58LC64K18P3 a S Y N C H R O N O U S SRAM SRAM X i18 SYNCHRONOUS 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS FEATURES • • • • • • • • • • • • Fast access times: 7 ,1 0 ,1 2 and 15ns