MT28F Search Results

FY520

Abstract: FW533 MT28F322D18
Contextual Info: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

MT28F008B3

Abstract: MT28F800B3
Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

FT28

Abstract: micron flash MT28F322D18 MICRON fBGA package code 44A4h
Contextual Info: TN-28-28 COMPARING MT28F322D18 TO GT28F320D18 TECHNICAL NOTE COMPARING MICRON MT28F322D18 TO INTEL® GT28F320D18 This article was originally published in 2001. MT28F322D18 supports four- or eight-word page length on all memory blocks. The Intel® GT28F320D18 operates

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

MT28F256J3

Abstract: intel marking 28f
Contextual Info: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY  MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks

Contextual Info: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F800B5 MT28F008B5 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 5 technology (B5):

FX222

Abstract: FX223
Contextual Info: 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa

Contextual Info: 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY MT28F200B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • SmartVoltage Technology (SVT):

micron marking code information

Abstract: flash device MARKing intel
Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY ADDENDUM FLASH MEMORY MT28F644W18 1.8V Low Voltage, Extended Temperature Refer to MT28F644W18 discrete data sheet Features Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero

FY550

Abstract: 44A4h
Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.22µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero

Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

MT28F160A3

Abstract: FW310 FW311
Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

Contextual Info: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):

Contextual Info: ADVANCE FLASH MEMORY MT28F008B5 FEATURES • Eleven erase blocks: 16KB boot block protected Two 8KB parameter blocks Eight main memory blocks • 5V-only operation: 5V ±10% Vcc 5V ±10% (12V compatible) V pp • Extended temperature range option: -40°C to +85°C

Contextual Info: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

MT28F002

Abstract: MT28F002B5 MT28F002C5VG-8T MT28F002C5 trs a13
Contextual Info: 2Mb, SMART 5 BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002C5 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization

Contextual Info: OBSOLETE PRELIMINARY 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F008B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

MT28F002

Abstract: MT28F200B5SG-6B MT28F002B5 MT28F200B5
Contextual Info: 2Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B5 MT28F200B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

FY541

Abstract: micron flash controller MT28F322D15FH-104BET
Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D15FH Super Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice

28f200-bB

Abstract: mt2f2 28F200-T L99 marking T199S
Contextual Info: PRELIMINARY M IC R O MT28F200 128K x 16, 256K x 8 FLASH MEMORY N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Five erase blocks: 16K B /8 K -w o rd bo o t b lo ck (protected) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s T w o m ain m em o ry b lo ck s

NOR Flash 1996 protect

Contextual Info: PRELIM IN ARY MT28F002B1 256K x 8 FLASH M EM ORY I^ IC R D N FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 8|a.A at

Contextual Info: 2 MEG x 16 ASYNC/PAGE FLASH MEMORY FLASH MEMORY MT28F322P3 LOW VOLTAGE, EXTENDED TEMPERATURE Features • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa