FT28 Search Results

Contextual Info: FT185-1.2/ FT285-1.2/FT385-1.2 Micropower VoltageVoltage Reference Micropower Reference • ■ ■ U ■ Features Description 10µA to 20mA Operating Range Guaranteed 1% Initial Voltage Tolerance Guaranteed 1Ω Dynamic Impedance Very Low Power Consumption

2kx8 eeprom

Contextual Info: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write

FT28C010

Contextual Info: FT28C010-xxxxx-X 128K x 8 Bit 5V EEPROM FEATURES • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits • • • • • • —Self-Timed —No Erase Before Write —No Complex Programming Algorithms

Contextual Info: FT28C17 16K 2K x 8 Parallel EEPROMs 7KH )7& LV DFFHVVHG OLNH D VWDWLF 5$0 IRU WKH UHDG RU ZULWH F\FOHV ZLWKRXW WKH QHHG RI H[WHUQDO FRPSRQHQWV 'XU LQJ D E\ WH ZULWH WKH DGGUHVV DQG GDWD DUH ODWFKHG LQWHU QDOO\ IUHHLQJ WKH PLFURSURFHVVRU DGGUHVV DQG GDWD EXV IRU

FT28HC256-12

Abstract: 12LMB FT28HC256-12FMB-AT FT28HC256
Contextual Info: FT28HC256 EEPROM 256K 32Kx8 Features • Fast Read Access Time – 70 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum

Contextual Info: FT28C17 16K 2K x 8 Parallel  LQJDE\ WHZULWHWKHDGGUHVVDQGGDWDDUHODWFKHGLQWHU

Contextual Info: FT28C010-xxxxx-X 128K x 8 Bit 5V EEPROM FEATURES • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits • • • • • • —Self-Timed —No Erase Before Write —No Complex Programming Algorithms

Memory

Abstract: FT28C512
Contextual Info: FT28C512/513 5 Volt Byte Alterable EEPROM • Two PLCC and LCC pinouts —FT28C512 • FT28C010 EPROM pin compatible —FT28C513 • Compatible with lower density EEPROMs FEATURES • Access time: 90ns • Simple byte and page write —Single 5V supply • No external high voltages or VPP control

2kx8 rom

Abstract: FT28C16 MIL-STD-883-M5004 FT28C16E 2kx8 EEPROM atmel
Contextual Info: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write

Contextual Info: Date: 12-2-13 Source Control Drawing QM: 6121 P/N: FT28F160S5-70 BS EN ISO 9001:2000 Accreditation AS9100 REV C Upscreening/Manufacturing Specification Document Contents Reference Documents Source of Parts Original Part Manufacturer/Donor Supplier Screening

FT385-1

Abstract: LT185-1
Contextual Info: FT185-1.2/ FT285-1.2/FT385-1.2 Micropower VoltageVoltage Reference Micropower Reference Equivalent LT185-1.2/ LT285-1.2/LT385-1.2 • ■ ■ U ■ Features Description 10µA to 20mA Operating Range Guaranteed 1% Initial Voltage Tolerance Guaranteed 1Ω Dynamic Impedance

Contextual Info: FT28C512/513 5 Volt Byte Alterable EEPROM • Two PLCC and LCC pinouts —FT28C512 • FT28C010 EPROM pin compatible —FT28C513 • Compatible with lower density EEPROMs FEATURES • Access time: 90ns • Simple byte and page write —Single 5V supply • No external high voltages or VPP control

Contextual Info: ESD-A40PBXM Type: Programmed Rapid Start Electronic Ballast Lamp Types: One or Two FT40W, FT39W or FT36W, FT28/ES or FT25/ES SLI lamps or cross reference GE, Philips, Sylvania/OSRAM lamps SPECIFICATIONS Input Number Lamp Lamp Input Watts Input Current Power Max Crest Ballast Bench Heat Test

FT28

Abstract: micron flash MT28F322D18 MICRON fBGA package code 44A4h
Contextual Info: TN-28-28 COMPARING MT28F322D18 TO GT28F320D18 TECHNICAL NOTE COMPARING MICRON MT28F322D18 TO INTEL® GT28F320D18 This article was originally published in 2001. MT28F322D18 supports four- or eight-word page length on all memory blocks. The Intel® GT28F320D18 operates

Am29325

Abstract: fc 4558 AM29C33 FT28 tek 455 manual th02
Contextual Info: 40V Am 29C325 2 i C M O S 3 2 -B it Flo atin g-P o int P rocessor > 3 DISTINCTIVE CHARACTERISTICS Single VLSI device perform s high-speed single­ precision floating-point arithm etic F loating-point addition, subtraction, and m ultiplication in a single clo ck cycle

Contextual Info:  7& 3DUDOOHO 3520. .[  )HDWXUHV ‡ )DVW5HDG$FFHVV7LPHQV ‡ )DVW%\WH:ULWHPV ‡ 6HOI7LPHG%\WH:ULWH&\FOH ‡ ‡ ‡ ‡ ‡ ‡ ‡ ±,QWHUQDO$GGUHVVDQG'DWD/DWFKHV ±,QWHUQDO&RQWURO7LPHU ±$XWRPDWLF&OHDU%HIRUH:ULWH 'LUHFW0LFURSURFHVVRU&RQWURO

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

speaker

Abstract: FT28 FT43 80KHZ wireless speaker
Contextual Info: 3<l <g> W F R O N T E R E L E C T R O N I C S C O . .L T D . R oH SR oducts FM BROADCAST S E R IE S Frequency Model FM&$iJSAW Description Tolerance/Bandwidth Typical Application Package UK 100.70MHz FT54 One-port SAW R esonator ± 60K H z/± 80K H z A p p l i e d in lo cal o s c i l l a t o r

Contextual Info: Multiple Beam Antennas D escription A multiple beam antenna is one in which more than one beam is produced by a single aperture. This is usually accomplished by placing two or more feeds in the focal region of a reflector or lens antenna with each beam corresponding to one feed.

FT230

Abstract: ft320 cur19 ft530 FT5000 FT1000 ft340 FT870
Contextual Info: AXIAL LEADED CAPACITORS Rugged 4 Terminal, Ultra-Low Impedance, 105°C Type UFT - 18 AWG Leads, 20 Amps/Type UFTA-16 AWG Leads, 45 Amps These capacitors are designed for rugged switching power supplies and military or other applications requiring ultra low impedance above 10kHz through a

FT28C010

Contextual Info:  7&[[[[[;    .[%LW9 3520 )($785(6 ‡ $FFHVV7LPHQV ‡ 6LPSOH%\WHDQG3DJH:ULWH ²6LQJOH96XSSO\ ²1R([WHUQDO+LJK9ROWDJHVRU933&RQWURO&LUFXLWV '(6&5,37,21

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Radiall R124

Contextual Info: TECHNICAL Page DATA 1 I 2 R 1 2 4 .0 5 5 .0 0 1 STRAIGHT PLUG SOLDER TYPE CABLE . 141 S M A -C O M s e r i e s Hex .315/flats hex. 8/Plats DIA 0.144 (03.65) OIA .163 (04.141 DIA 0.039 (011 I 0.441 ( NOMINAL IMPEDANCE 50 FREQUENCY RANGE 0-18 TEMPERATURE RATING

FT28C256

Abstract: dmb A5
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum