MRF8372 Search Results

8372 motorola

Abstract: NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz
Contextual Info: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

MRF8372

Abstract: MRF8372G
Contextual Info: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical

Contextual Info: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package DESCRIPTION: SO-8 R1 suffix–Tape and Reel, 500 units

MRF8372

Abstract: PG 750 8 PIN
Contextual Info: MRF8372 NPN SILICON LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. PACKAGE STYLE SO-8 FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60% typical • R1 suffix – Tape and Reel, 500 units

mrf8372

Contextual Info: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

52803

Contextual Info: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF8372 The RF Line NPN Silicon High-Frequency TVansistor . . . designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW

ferroxcube 56-590-65

Abstract: MRF8372 equivalent macro-X ceramic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

motorola 8372

Abstract: 8372 motorola
Contextual Info: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

MRF8372

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB

Contextual Info: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical

MRF581G

Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
Contextual Info: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mce544

Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
Contextual Info: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz

MRF586

Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA

BFR91 transistor

Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

MRF553G

Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

s-parameter 2N4427

Abstract: S-parameter 2N5179 BFR91
Contextual Info: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units

BFR91

Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz

MRF559

Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB