MPZ2012S300AT000 Search Results

MPZ2012S300AT000

Contextual Info: Page 1 of 1 Product Name Series Type Part Number Chip Beads MPZ Series 2012 Type MPZ2012S300AT000 Product Lifecycle Stage PROD Specification Summary/Applications/Feature Mounting Method Flag Yes Processing MULTI-LAYER Shape Chip Number of Circuits Nom Summary

S600C

Abstract: MPZ1005S100CT
Contextual Info: E M C C o m p o n e n t s December 2013 Chip Beads For power line MPZ series MPZ0603 MPZ1005 MPZ1608 MPZ2012 0603[0201 inch]* 1005[0402 inch] 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] 2/23 E M C C o m p o n e n t s REMINDERS FOR USING THESE PRODUCTS

NI-1230-4H

Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

MRF8P9040N

Abstract: mrf8p ATC100B820JT RO4350B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

j821

Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

transistor J128

Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

*J532

Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

MRF8S9232N

Abstract: ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333
Contextual Info: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF8P20100HR3

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF8P9040N

Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

MRF8P8300HS

Abstract: ATC100B2R0BT500X MRF8P8300H MPZ2012S300A AN1955 ATC100B100JT500XT ATC Semiconductor Devices MPZ2012S300AT ATC100B121JT500XT j004
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

data 8873 64 pin colour tv ic

Abstract: EPCOS bb 2790 varistor 250v 592 PH epcos 565-2 BT 4840 amp 6-hole Ferroxcube Wide band HF Choke SRF 3897 NFM55PC155F1H4L B82789-C104 cx 2602 semiconductor
Contextual Info: 1209 Technical portal and online community for Design Engineers - www.element-14.com EMC, Filters & Suppression Page Cable Ferrites . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ferrite Transformers . . . . . . . . . . . . . . . . . . . . . . .