CRCW12061K00FKEA Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

Contextual Info: CDB1601-120W CS1601 120W, High-efficiency PFC Demonstration Board Features General Description  Line Voltage Range: 108 to 305 VACrms  Output Voltage VLINK : 460V  Rated Pout : 115W  Efficiency: 95% @ 115W  Spread Spectrum Switching Frequency

CTX22-16134

Contextual Info: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

250GX-0300-55-22

Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

C4532X7RIH685K

Abstract: ATC600F1R0BT250XT AN1955 J373
Contextual Info: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: User's Guide SBOU057 – February 2008 BUF16821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF16821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects

J014

Abstract: BLM21PG300SN1D
Contextual Info: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base

MW7IC930N

Abstract: J492 atc100b6r2 ATC100B470JT500XT GRM55DR61H106K MW7IC930NR1 A114 A115 AN1977 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage

Contextual Info: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base

vishay rf output power transistor

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Contextual Info: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

ATC100B3R9CT500XT

Abstract: BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S8260H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base

CRCW060333R0FKEA

Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
Contextual Info: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer

C4532X7RIH685K

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

Contextual Info: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: User's Guide SBOU066 – September 2008 BUF08821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF08821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects

OTS-38

Contextual Info: User's Guide SBOU053 – September 2007 BUF22821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF22821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects

MW7IC930NR1

Abstract: MCGPR35V337M10X16-RH ATC100B470JT500XT AN1987 MW7IC930GNR1 MW7IC930NBR1 AN1977 C0603C103J5RACTU
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 1, 10/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage

transistor J128

Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

RLCS-1007

Contextual Info: CDB150x-01 CS1501 90W, High-efficiency PFC Demonstration Board Features General Description  Variable On Time, Variable Frequency, DCM PFC Controller The CDB150x-01 board demonstrates the performance of the CS1501 digital PFC controller with a 90 watt output at a link voltage of 400 volts.