ATC600F1R0BT250XT Search Results

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ON SEMICONDUCTOR J122

Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

MMG3014N

Contextual Info: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup

GRM31CR61H225KA88L

Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage

C4532X7RIH685K

Abstract: ATC600F1R0BT250XT AN1955 J373
Contextual Info: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

ATC600S10

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

j295

Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
Contextual Info: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage

Contextual Info: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with

ATC600S2R7BT250XT

Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

T491C106K050AT

Abstract: ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with

T491C106K050AT

Abstract: A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 ATC600F4R7BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

J350

Abstract: J449 ATC600F101JT250XT ATC600F0R5BT250XT SG732AT MD7IC AN1977 AN1987 ATC600F101 gsc3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

GSC351-HYB1900

Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1
Contextual Info: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage