EMVY500ADA221MJA0G Search Results

Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

EMVY101ARA101MKE0S

Abstract: EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

JA02

Abstract: EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105℃ MZA ●Endurance : 1,000 to 5,000 hours at 105℃ ●Low impedance ●For digital equipment, especially DC-DC converters ●Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110

ON SEMICONDUCTOR J122

Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

b0912

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

NIPPON CAPACITORS

Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •

Contextual Info: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

J1126

Abstract: Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage

EMVY160ADA100MD55G

Abstract: EMVY100ARA222MKG5S EMVY101SDA101MLH0S
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

JA02

Abstract: EMVY160
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1,000 to 5,000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

ATC600S3R0

Abstract: ATC600S0R3 ATC600S0R2 37C0064
Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

mvs 100

Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
Contextual Info: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索

EMVY250SSS222MLN0S

Abstract: EMVY6R3SSS682MLN0S JA02 EMVY250ADA 10MF EMVY6R3ADA220MD55G EMVY6R3ADA330ME55G EMVY350ADA4R7MD55G EMVY500ADA221MJA0G EMVY250ADA471MJA0G
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES

MRFE6S9045NR1

Abstract: ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION

mosfet j133

Abstract: MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers