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Kyocera AVX Components


Kyocera AVX Components 600S3R0BT250T Silicon RF Capacitors / Thin Film 250V 3pF Tol 0.1pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0BT250T	Reel	8,000		500	1 - 10 - 100 - 1000 $0.50 10000 $0.48	Buy Now
Kyocera AVX Components 600S3R0BT250XT Silicon RF Capacitors / Thin Film 250volts 3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0BT250XT	Reel	5,000		500	1 - 10 - 100 - 1000 $0.46 10000 $0.43	Buy Now
Kyocera AVX Components 600S3R0BT250TV Silicon RF Capacitors / Thin Film 3PF 250V .1PF 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0BT250TV	Reel	500		500	1 - 10 - 100 - 1000 $0.56 10000 $0.46	Buy Now
Kyocera AVX Components 600S3R0AW250XT Silicon RF Capacitors / Thin Film 250volts 3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0AW250XT	Reel			500	1 - 10 - 100 - 1000 $0.83 10000 $0.74	Buy Now
Kyocera AVX Components 600S3R0AT250T Silicon RF Capacitors / Thin Film 250V 3pF Tol 0.05pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0AT250T	WAFL			500	1 - 10 - 100 - 1000 $0.90 10000 $0.75	Buy Now

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ATC600S3R0 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor SMD P2F Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE	PDF
b0912 Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FS T1G6003028-FS b0912	PDF
140-A525-SMD Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa Contextual Info: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa	PDF
Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FS T2G6003028-FS TQGaN25	PDF
ATC600S3R0 Abstract: ATC600S0R3 ATC600S0R2 37C0064 Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064	PDF
SMD-B 053 Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0 Contextual Info: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:	Original	FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0	PDF
ATC600S0R Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FS T1G6003028-FS ATC600S0R	PDF
Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FL T1G6003028-FL	PDF
Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1	Original	T1G6003028-FL T1G6003028-FL	PDF
transistor SMD P2F Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f MIL-HDBK-263 Filtronic Components	PDF
Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FS T2G6003028-FS	PDF
Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1	Original	T1G6003028-FS T1G6003028-FS	PDF
transistor SMD P2F Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8 Contextual Info: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8	PDF
Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99	PDF