ATC100B100JT500XT Search Results

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

J365

Abstract: TLC 3391 ATC100B150JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

NI-1230-4H

Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

ATC100B390JT500XT

Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

AN1977

Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base

CRCW12064701FKTA

Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

Nippon capacitors

Abstract: MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

ATC600F241JT250XT

Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

NIPPON CAPACITORS

Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110

2225x7r225kt3ab

Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

250GX-0300-55-22

Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

AN1907

Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

AFT09MS031NR1

Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

AN3263

Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in