MP901 Search Results

MS202

Contextual Info: MODULATORS MODULATORS QPSK QPSK Click Package To View Outline Drawing COAXIAL CONNECTOR MODELS INPUT CARRIER FREQUENCY INSERTION LOSS dB (MHz) MAX AMPLITUDE UNBALANCE (dB) MAX 113 PHASE UNBALANCE (Degrees) Fc FULL BAND MAX MAX INPUT 1 dB COMP. PT. (dBm)

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

MK-734S

Abstract: mr 206 115 MR 31 relay MR Connector MR-210 MF-120 MR-202 Relay BNC T connectors INSERTION LOSS MK-34-15 MK-724S
Contextual Info: MODULATORS QPSK 113 COAXIAL CONNECTOR MODELS INPUT CARRIER FREQUENCY INSERTION LOSS dB (MHz) MAX AMPLITUDE UNBALANCE (dB) MAX PHASE UNBALANCE (Degrees) Fc FULL BAND MAX MAX 153 INPUT 1 dB COMP. PT. (dBm) MIN VSWR PACKAGE PIN-OUT (See Below) MODEL MAX 15 - 510

MHT1810

Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

MP2143

Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

AD166

Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT

Modulators

Abstract: MR-201 mp910 MF-206 MF-117 MK-711S MK-734S MP-910 smk 201 5 pin relay sms-244
Contextual Info: MODULATORS I&Q LEADLESS SURFACE-MOUNT CARRIER FREQUENCY 102S CARRIER POWER dBm CONVERSION LOSS (dB) SSB REJECTION (dB) LO/RF ISOLATION (dB) INPUT 1 dB COMP. PT. (dBm) INPUT IP3 (dBm) (MHz) NOM MAX MIN MIN MIN TYP 28.5 - 31.5 57 - 63 66.5 - 73.5 40 - 80 80 - 160

Contextual Info: MP90 Axial Leaded Round .75/19 Ý Ý Ý Ý Ý 1.05/27 1.30/33 1.6/41 2.10/54 d= .032/.8 .032/.8 .032/.8 .032/.8 .04/1 .04/1 METALLIZED .87/22 POLYPROPYLENE HIGH CURRENT L= Ý Lead Diameter: Dimensions Inches/mm : µF .1 .15 .22 .33 .47 .68 1.0 1.5 2.0 3.0

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

KL8503

Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N2128

Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

TI3028

Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

A400M

Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

MK-734S

Abstract: MK-34-15 MK-714S MK-724S MK-751 MK-753 MK-755 MK-756 MK-757 MK-758
Contextual Info: Click Package To View Outline Drawing MODULATORS MODULATORS QPSK QPSK COAXIAL CONNECTOR MODELS INPUT CARRIER FREQUENCY INSERTION LOSS dB (MHz) MAX AMPLITUDE UNBALANCE (dB) MAX 113 PHASE UNBALANCE (Degrees) Fc FULL BAND MAX MAX INPUT 1 dB COMP. PT. (dBm)

4-40VDC

Abstract: 440VdC MP90
Contextual Info: MP90 Axial Leaded Round ➝ ➝ ➝ ➝ ➝ .87/22 1.05/27 1.30/33 1.6/41 2.10/54 d= .032/.8 .032/.8 .032/.8 .032/.8 .04/1 .04/1 METALLIZED .75/19 Dimensions Inches/mm : µF 250VDC D .1 .15 .22 .33 .47 .68 1.0 1.5 2.0 3.0 5.0 6.0 440VDC L .39/10 .47/12 .49/12.5

MR-202 Relay

Abstract: MR-201 MR-206 mp910 mr234
Contextual Info: MODULATORS QPSK THROUGH-HOLE 8 PIN - RELAY CAN INPUT CARRIER FREQUENCY INSERTION LOSS dB (MHz) MAX AMPLITUDE UNBALANCE (dB) MAX PHASE UNBALANCE (Degrees) Fc FULL BAND MAX MAX INPUT 1 dB COMP. PT. (dBm) MIN VSWR PACKAGE PIN-OUT (See Below) MODEL MAX 10.165 - 11.235

mp910

Abstract: MP-910 HR-209 MP901 mp341
Contextual Info: QPSK MODULATORS Through-H ole 8 p in - R e l a y Ca n INPUT C A R R IE R F R E Q U E N C Y INSERTION L O S S dB (MHz) MAX 10.165-11.235 20.33 - 22.47 28.5-31.5 5 2 -8 8 5 7 -6 3 66.5 - 73:5 104-176 133-147 190-210 285-315 810-830 869 - 894 935 - 960 1805-1880

transistor TF78

Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C