MOSFET CROSS Search Results

Contextual Info: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can

lm2725

Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
Contextual Info: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with

t 3866 mosfet

Contextual Info: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

ISL6622

Abstract: ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11 power supply 12v, 7v, 5v
Contextual Info: ISL6622 Data Sheet October 30, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a

622Z

Abstract: ISL6622 6622cbz ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11
Contextual Info: ISL6622 Data Sheet April 16, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6470.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a

ISL6622B

Abstract: ISL6622BCBZ ISL6622BCRZ ISL6622BIBZ ISL6622BIRZ TB363 TB417 VR11 isl6622
Contextual Info: ISL6622B Data Sheet August 4, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6602.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6622B is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a

36v DC MOTOR SPEED CONTROLLER schematic

Abstract: TD340 full bridge driver schematic diagram motor controller 24v 10a h-bridge driver dc motor 9v equivalent of BS170 BS170 application note 12v 10A dc driver motor control mosfet 300 Volt mosfet schematic circuit h-bridge pwm schematics circuit
Contextual Info: TD340 H-BRIDGE QUAD POWER MOSFET DRIVER FOR DC MOTOR CONTROL PRELIMINARY DATA • QUAD N-CHANNEL MOSFET DRIVE ■ INTEGRATED CHARGE PUMP FOR HIGH SIDE MOSFET DRIVING ■ VERY LOW GROUND EMI NOISE ■ MOTOR SPEED AND DIRECTION CONTROL LOW SIDE PWM ■ INTERNAL OR EXTERNAL PWM SOURCE

Si2301CDS

Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2303CDS

Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

FDFMA2P029Z

Abstract: a5200
Contextual Info: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward

7404 not gate ic

Abstract: 7404 not gate ttl cmos advantages disadvantages TC1426 ic 7404 not gate datasheet IC 7404 14 pin ic 7404 not gate datasheet data sheet IC 7404 not gate ic 7404 ic 7404 datasheet
Contextual Info: R E A L W Power Management MOSFET Gate Drivers from Texas Instruments O R L D S I G N A L P TM R O C E S S I N G Includes: • Pin-Compatible Cross Reference to Industry Standard Drivers • MOSFET Driver Selection Guide • Predictive Gate Drive Technology Summary

class d amplifier schematic hip4080

Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Contextual Info: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

2P110

Abstract: P-channel power mosfet 30V FDFM2P110 IR P-Channel mosfet
Contextual Info: FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a

CBVK741B019

Abstract: F011 F63TNR F852 FDS3570 FDS9953A L86Z code marking TI 9A
Contextual Info: FDS3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

6n303

Abstract: fdfs6n303 fdfs SOIC-16
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

ISL6605IB

Abstract: MO-220 TB363 ISL6605 ISL6605CB ISL6605CB-T ISL6605CR ISL6605CR-T qfn Substrate design guidelines application note gate driver with bootstrap capacitor
Contextual Info: ISL6605 Data Sheet April 2003 FN9091.1 Synchronous Rectified MOSFET Driver Features The ISL6605 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with

FDW2502P

Abstract: 2502P CBHK741B019 F63TNR FDW2520C
Contextual Info: FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

6680

Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935
Contextual Info: FDD6630A N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

data sheet 6690a

Abstract: SOIC-16 F011 F63TNR F852 FDS6690A L86Z
Contextual Info: October 2001 FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Si9430DY

Contextual Info: Si9430DY Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

F109

Abstract: FCA16N60
Contextual Info: SuperFET FCA16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCA20n60s

Abstract: F109 600V N-Channel MOSFET TO-3P N-Channel mosfet 600v ir RG 2006 10A 600V y parameter of mosfet
Contextual Info: SuperFET FCA20N60S 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and