MOSFET 472 Search Results

Contextual Info: FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 m Features Description • RDS on = 185 m (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

Contextual Info: FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 mΩ Features Description • RDS on = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

527 39a

Contextual Info: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

SHD226408

Contextual Info: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

APV2121S

Abstract: photovoltaic MOSFET driver APV1121S
Contextual Info: 6 Control circuit 2 4 1 4 Control circuit 3 3 2 C-UL Pending PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER 1 UL Pending FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in

AQY21SOP

Abstract: AQV251 photomos aqy210 AQV257 AQV214E Application transistor 1002 ac to dc transformer AQV10 2803 relay driver ic
Contextual Info: PhotoMOS Relay Technical Information How PhotoMOS Relays Operate: Optoelectronic device directly drives a power MOSFET. Semiconductor relay incorporating the advantages of both electromagnetic OUT relays and semiconductors. LED OUT Power MOSFET Optoelectronic

20n60s1

Abstract: 60v 10a p type mosfet 20n60s
Contextual Info: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system

20N60S1

Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
Contextual Info: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features n n n n n HEXFET Power MOSFET Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated

G60N

Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Contextual Info: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits

FMW20N60S1

Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Contextual Info: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

19n60

Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

19n60

Contextual Info: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

19n60

Contextual Info: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

GS54

Contextual Info: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

1N4148

Abstract: J-STD-020B SC1403 SC420 SC420A SC420AIMLTRT
Contextual Info: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power

IRF 930

Abstract: IRF3305
Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET

Contextual Info: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM