MOSFET 40A 100V Search Results

sil 5102

Abstract: IRFP150 TB334
Contextual Info: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()

irfp150

Contextual Info: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

P35NF10

Abstract: B35NF10
Contextual Info: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested

P35NF10

Abstract: B35NF10 p35nf STP35NF10 JESD97 STB35NF10 STB35NF10T4 B35NF TO220
Contextual Info: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested

Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

sil 5102

Abstract: 150N IRFP150 TB334 PO40A
Contextual Info: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N

40NF20

Abstract: STMicroelectronics 40nf20 STB40NF20
Contextual Info: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20

L6PR

Abstract: P40N20 STF40N20 STB40N20 STP40N20 STP40N20FP STW40N20
Contextual Info: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP

40NF20

Abstract: STMicroelectronics 40nf20 mosfet 40a 200v STP40NF20 st 393 STB40NF20 STF40NF20 STW40NF20
Contextual Info: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20

40NF20

Abstract: STMicroelectronics 40nf20 STP40NF20 STB40NF20 S1217 STW40NF20 STF40NF20
Contextual Info: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20

P40N20

Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
Contextual Info: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP

P40NF10L

Abstract: p40nf10 p40nf JESD97 STP40NF10L
Contextual Info: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

B40NF

Abstract: B40NF10 B40NF10L
Contextual Info: STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

p40nf10

Abstract: P40NF10L STP40NF10L
Contextual Info: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

2E12

Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

frk150

Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: FRK9160D FRK9160H FRK9160R
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK150D FRK150H FRK150R
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current