150N Search Results

Contextual Info: UM23V8001 1,048,576 X 8 BIT WIDE VOLTAGE RANGE CMOS MASK ROM Features • 1,048,576 x 8 bit organization ■ Wide power supply range: + 2.7V to +5.5V ■ Access times: 150ns m ax. /VCC = 5V 250ns (m ax.)/VCC = 3V ■ Current: Operating: 50mA (m ax.)/VCC = 5V

TMM24256P

Abstract: AF150 TC54256P TTL af tc54256ap
Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access

X28LV010

Contextual Info: X28LV010 1M 128K x 8 Bit 3.3 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 70, 90, 120, 150ns • Simple Byte and Page Write —Single 3.3V±10% supply —No external high voltages or VPP control circuits —Self-timed • no erase before write

150N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

d150n

Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

BS62UV256

Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
Contextual Info: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns

EXEL MICROELECTRONICS

Abstract: XLS48C64-200 XLS48C64-250 XLS48C64C-150
Contextual Info: XL48C64 M IC R O E L E C T R O N IC S . IN C FEATURES • ■ ■ ■ ■ ■ ■ ■ 8192 x 8 Bit E2PRO M Single 5-Volt Supply Fast Data Access: 150ns Low Power Requirements: - 100/u.a Standby - 100/u.a Quiescent Automatic Write Cycle Time-out Foolproof False Write

82S185

Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
Contextual Info: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector

IXXH100N60B3

Abstract: 100n60
Contextual Info: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: IECQ-CECC and MIL grade ranges IECQ-CECC and MIL grade ranges Maximum capacitance values. 1812 2220 2225 33nF 100nF 150nF 220nF X7R 100nF 330nF 1.0µF 1.5µF 1.5µF 3.3µF 5.6µF 6.8µF C0G/NP0 1.0nF 4.7nF 15nF 22nF 27nF 68nF 100nF 150nF X7R 56nF 220nF 820nF

3A73

Contextual Info: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at

hm62256

Contextual Info: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)

Contextual Info: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA

6264alp

Abstract: 6264ALSP-10
Contextual Info: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •

2SK868

Abstract: 2SK868A SC-65 C1624
Contextual Info: P o w e r F-MOS FET 2SK868, 2SK 868A 2 S K 8 6 8 , 2S K 8 6 8 A Silicon N-channel Power F-M O S FET P ackage Dim ensions • Features • Low ON resistance R d s on : R d s (on) = 0 .2 fl (typ.) • High switching rate : tf= 150ns (typ.) • No secondary breakdown

HM472114AP-2

Abstract: HM472114A HM472114A-2 2114L HM472114A-1 HM472114AP-1 HM472114AP2
Contextual Info: H M 472114A -1 ,H M 4 7 2 1 1 4 A -2 , H M 472114A P-1 ,H M 4 7 2 1 1 4 A P -2 1 0 2 4 -word X 4 - bit Static Random Access M em ory Fast Access T i m e . H M 4 72 114 A -1 150ns max. H M 4 7 2 1 1 4 A -2 200ns (m ax.)

MAX4182

Contextual Info: * MAX4182 LARGE-SIGNAL RESPONSE AVCL=+2 * 4181LTRA.CIR XAR1 3 4 5 2 1 MAX4182 * +IN -IN VCC VEE OUT VCC 5 0 5V VEE 2 0 -5V VIN 3 0 PULSE -1V 1V 20ns 4N 4N 50nS 100ns RF 1 4 2.4K R1 4 0 2.4k RL 1 0 1K .OPTIONS RELTOL=.01 .TRAN 1nS 150nS .PROBE .LIB MAX4182.FAM

100N

Abstract: 150N MAX961
Contextual Info: * MAX961 Comparator Latch test circuit. * 961LATCH.CIR XAR1 3 2 7 4 352 300 433 483 MAX961 * +in -in v+ v- le gnd qout qoutcomp VP 7 0 5V VN 4 0 0V VIN 3 0 PULSE 0V 2.5V 100N 1N 1N 100N ;Input generator VLE 352 0 PULSE(0V 5V 150N 1N 1N 5000N) vbias 2 0 1V

HT23C010

Contextual Info: HT23C010 CMOS 128K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)

HT23C128

Contextual Info: HT23C128 CMOS 16K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)