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    STMicroelectronics

    STMicroelectronics STB40NF10LT4

    - Tape and Reel (Alt: STB40NF10LT4)
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    Avnet Americas STB40NF10LT4 Tape & Reel 16,000 15 Weeks 1,000
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    Newark () STB40NF10LT4 Cut Tape 361 1
    • 1 $3.77
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    STB40NF10LT4 Tape & Reel 1,000
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    TME STB40NF10LT4 314 1
    • 1 $3.22
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    Avnet Silica STB40NF10LT4 2,000 16 Weeks 1,000
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    EBV Elektronik STB40NF10LT4 16 Weeks 1,000
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    STMicroelectronics STB40NF10T4

    - Tape and Reel (Alt: STB40NF10T4)
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    Avnet Americas STB40NF10T4 Tape & Reel 1,000
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    Bristol Electronics STB40NF10T4 459 1
    • 1 $2.51
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    Vyrian STB40NF10T4 13,166
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    B40NF10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b40nf10

    Abstract: STB40NF10 STB40NF10T4 B40NF
    Contextual Info: B40NF10 N-CHANNEL 100V - 0.025Ω - 50A - D²PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE B40NF10T4 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.028 Ω 50 A TYPICAL RDS(on) = 0.025Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		stb40nf10stb40nf10t4b40nf10b40nf PDF

    B40NF

    Abstract: B40NF10 B40NF10L
    Contextual Info: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		stb40nf10lb40nfb40nf10b40nf10l PDF

    B40NF10

    Contextual Info: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization


    Original     		stb40nf10b40nf10 PDF

    B40NF10

    Abstract: N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW
    Contextual Info: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization


    Original     		stb40nf10b40nf10n-channel mosfet to-247 50ab40nf+3jesd97stb40nf10t412new PDF

    b40nf10

    Abstract: P40NF10 STD40NF10 STB40NF10T4 STB40NF10 STD40NF10T4 STP40NF10 D40NF
    Contextual Info: STP40NF10 STD40NF10 - B40NF10 N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS on ID STP40NF10 STD40NF10 B40NF10 100 V 100 V 100 V < 0.028 Ω < 0.028 Ω < 0.028 Ω 50 A 50 A 50 A • ■ ■


    Original     		stp40nf10std40nf10stb40nf10o-220/dpak/d2pak+6o-220b40nf10p40nf10stb40nf10t4std40nf10t4d40nf PDF

    b40nf10

    Abstract: JESD97 STB40NS15 STB40NS15T4 b40n
    Contextual Info: STB40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STB40NS15 150V <0.052Ω 40A • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 D2PAK Description


    Original     		stb40ns15stb40ns15t4b40nf10jesd97+1b40n PDF

    B40NF10L

    Abstract: b40nf10 B40NF JESD97 STB40NF10L
    Contextual Info: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		stb40nf10lb40nf10lb40nf10b40nf+1jesd97 PDF