B40N Search Results

871P-B40N40-N3

Abstract: 871P-D40NP40-D4 ALLEN-BRADLEY MICRO 5 PIN 871P-BW15N40-R3 b20n40 B40N 871A
Contextual Info: Inductive Proximity Sensors Bulletin 871P VersaCubet Description Bulletin 871P VersaCubet inductive proximity sensors are self-contained, solid state devices designed to sense the presence of ferrous and nonferrous metal objects without touching them. VersaCube models feature two LEDs,

b40nf10

Abstract: STB40NF10 STB40NF10T4 B40NF
Contextual Info: B40NF10 N-CHANNEL 100V - 0.025Ω - 50A - D²PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE B40NF10T4 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.028 Ω 50 A TYPICAL RDS(on) = 0.025Ω EXCEPTIONAL dv/dt CAPABILITY

B40NF

Abstract: B40NF10 B40NF10L
Contextual Info: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

B40NF

Abstract: JESD97 STB40NS15 STB40NS15T4
Contextual Info: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS B40NS15 150V RDS on (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ID 40A 3 1 D2PAK Applications

215730

Contextual Info: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216

B40N

Contextual Info: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS B40NS15 150V RDS on ID (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances u d o 3 r P e 1 D2PAK

B40NF10

Contextual Info: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization

P40N20

Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
Contextual Info: STP40N20 - STF40N20 B40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW B40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP

B40NF10

Abstract: N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW
Contextual Info: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization

F40N20

Abstract: STF40N20 STP40N20-STF40N20 W40N20 STB40N20 STP40N20 STW40N20 P40N b40n
Contextual Info: STP40N20-STF40N20 B40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STP40N20 STW40N20 B40N20 STF40N20 • ■ ■ ■ ■ ■ VDSS 200 200 200 200 V V V V Figure 1: Package

b40nf10

Abstract: P40NF10 STD40NF10 STB40NF10T4 STB40NF10 STD40NF10T4 STP40NF10 D40NF
Contextual Info: STP40NF10 STD40NF10 - B40NF10 N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS on ID STP40NF10 STD40NF10 B40NF10 100 V 100 V 100 V < 0.028 Ω < 0.028 Ω < 0.028 Ω 50 A 50 A 50 A • ■ ■

L6PR

Abstract: P40N20 STF40N20 STB40N20 STP40N20 STP40N20FP STW40N20
Contextual Info: STP40N20 - STF40N20 B40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW B40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP

Contextual Info: Sockets, non-insulated - 2 - 4 0 mm dia. Socket B.N with threaded metric stud B.N H *S W 4 LAIII 5 LAIN LAIII LAIII LAIII B2N B3N 01.0001 01.0002 5.5 6 2 3 16.5 16.5 36 40 M3 M4 16 20 20 20 B4N B5N B6N 01.0003 01.0004 7 4 5 19.5 19.5 19.5 34 50 50 53

b40nf10

Abstract: JESD97 STB40NS15 STB40NS15T4 b40n
Contextual Info: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID B40NS15 150V <0.052Ω 40A • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 D2PAK Description

B40NF10L

Abstract: b40nf10 B40NF JESD97 STB40NF10L
Contextual Info: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization