MOS2 Search Results

H01N45A

Contextual Info: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

270v varistor d - 302

Abstract: MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A
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UBQJOHT MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1 SPR2 SPR2 SPR3 SPR3 SPR3 LT1/6 LT1/6 LT1/4 LT1/4 RF16 RF16

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A

03n60

Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

H2N7002

Contextual Info: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

R07DS0904EJ0120

Abstract: RJK03P0DPA
Contextual Info: Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 25 A, 7.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0904EJ0120 Rev.1.20 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

H2302N

Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

Contextual Info: HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-525 C 4th. Edition Features • • • • Low on-resistance Capable o f 2.5 V gate drive Low drive current High density mounting Outline SOP-8 78 5 6 ò ô MOS1 MOS2 S1 S3

H2N7002

Contextual Info: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V

H02N65

Abstract: H02N60E H02N60F h02n
Contextual Info: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor

*07n60

Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

rf630

Abstract: HIRF630 HIRF630F
Contextual Info: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

mosfet 2g2

Abstract: H9926CTS H9926TS mark 6A N-channel code TS
Contextual Info: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment

40N03

Abstract: 40n0 H40N03E
Contextual Info: HI-SINCERITY Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H40N03E H40N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET 25V, 40A

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

transistor 6n60

Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
Contextual Info: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D 5 6 D D Î-Î Î-Î ó S1 MOS1 ó s3 MOS2 1.3

Contextual Info: HI-SINCERITY Spec. No. : MOS200810 Issued Date : 2008.12.31 Revised Date : Page No. : 1/6 MICROELECTRONICS GROUP. H3401N H3401N Pin Assignment & Symbol 3 P-Channel Enhancement Mode Field Effect Transistor 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

02n60

Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

Contextual Info: Preliminary Datasheet RJK03P6DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 45 A, 2.4 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0905EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain

Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A

mosfet 600v 10a to-220ab

Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A