MODE-S TRANSISTOR Search Results

CS3705

Abstract: RFM10n50 RFM10N45
Contextual Info: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies S M P S , motor control, welding,

02p SMD TRANSISTOR

Abstract: sot23 02p BST82 smd transistor marking TL MBB076
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N -channel enhan ce m e n t mode vertical D -M O S tra n sisto r in S O T23 envelope and designed fo r use as S urface M ounted D evice SM D in

Contextual Info: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-500B

Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
Contextual Info: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK445

Abstract: BUK445-600A BUK445-600B
Contextual Info: N AUER P H I L I P S / D I S C R E T E 5SE D • 1^53=131 0 Q 2 0 H 1 S Ô ■ P o w erM O S tra n s isto r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

mosfet IRF 3306

Abstract: IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153
Contextual Info: Standard Power M O S FE T s • IRFP150, IRFP151, IRFP152, IRFP153 File Number Power MOS Field-Effect Transistore N-Channel Enhancement-Mode Power Field-Effect Transistors 34 A and 40 A, 60 V - 100 V rDsioni = 0.055 Q and 0.08 fi N-CHANNEL ENHANCEMENT MODE

BUZ25

Abstract: IEC134 TO3 philips t03 package transistor pin dimensions HC-293
Contextual Info: PowerMOS transistor BUZ25 GfciE D N AMER PHILIP S/DISCRET E ^53^31 OOmbDS S • July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

transistor bt 137

Abstract: 100-C BUK438-500B
Contextual Info: N AMER P H I L I P S / D I S C R E T E fc^E ]> • bb 5 3 T 3 1 OOSDH^S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK453-500B

Abstract: T0220AB E04020
Contextual Info: N AMER P H I L I P S / D I S C R E T E b'IE D t . b s a 'm 00301=10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUZ356

Abstract: T0218AA BUZ-356
Contextual Info: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IRFS12

Abstract: IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet
Contextual Info: 01 3075001 ODIÖSEM 1 |~~ 3875081 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18329 _ IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

buz25

Contextual Info: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Diode LT 404

Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB
Contextual Info: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor IC BT 134

Contextual Info: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK455-600B

Abstract: BUK455-600A BUK455 T0220AB
Contextual Info: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

AN027R1

Abstract: UAA4006A UAA4006 UAA4006ADP fly-back transformer UAA4006A 1N4I48 639S thomson rf power transistor UAA400
Contextual Info: S G S-THOnSON 7ÛC D I 7 e]5^5 3 7 O D D b 4 b l . -,— - 78C 0 6 4 6 1 T - sz - tb 3 k UAA4006A SWITCH MODE POWER SUPPLY CONTROL CIRCUIT SWITCH MODE POWER SUPPLY CONTROL CIRCUIT The UAA4006A is a regulation and control device for fly-back sw itch mode pow er supplies using one external sw itching transistor. .

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

Contextual Info: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is

MRC23

Abstract: URC204 BSP152
Contextual Info: Philips Semiconductors bbS3T31 0023053 IflS IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N A PIER P H I L I P S / D I S C R E T E FEATURES b7E SYMBOL v DS • High-speed switching • No secondary breakdown. N-channel enhancement mode

BUK445-400B

Abstract: 100-lr
Contextual Info: N AflER P H I L I P S / D I S C R E T E b^E ]> m bbS3T31 0Q3QSbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies