MODE-S TRANSISTOR Search Results

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

Contextual Info: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is

BUZ356

Contextual Info: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

SMP40P06

Contextual Info: Tem ic s u . c o . i x SMP40P06 P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V lR litb S S fb S O n O ) 1»« A) 0 .0 4 5

Contextual Info: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power

IRFD

Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
Contextual Info: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V

ARF1500

Abstract: 700B RF BeO 750w planar transistor
Contextual Info: S D S S D S ARF1500 ARF1500 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 1525-xx S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

LT2307

Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMO S trench technology. This high density process is especially tailored

BUY69

Abstract: BUY69A BUY69B BUY69C P6019 p6020 P6042 V1265
Contextual Info: BUY69 NPN SILICON POWER TRANSISTOR 8 7 3 B U Y 6 9 S E R IE S T R A N S IS T O R S A R E D E S IG N E D F O R U S E IN • Switching Mode Power Supplies • I nverters

"27 mhz" amp

Abstract: arf15beo 700B ARF1500 ARF1501
Contextual Info: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

44222

Abstract: 2N6975 442-22 ic lg 631 2N6976 2N6977 2N6978 S2GS-44222
Contextual Info: Insulated-Gate Bipolar Transistors- 2N6975, 2N6976, 2N6977, 2N6978 File Num ber 2297 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Vceom: 2 V T«: 1 /us, 0.5 /j s N-CHANNEL ENHANCEMENT MODE

ARF1501

Abstract: "27 mhz" amp 700B ARF1500 RF BeO
Contextual Info: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

60n03l

Abstract: 60N03
Contextual Info: S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) Max ID High power and current handling capability. 11 @ V G S = 10V

65N03L

Contextual Info: S DP /B 65N03L May,2004 ver1.1 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 9 @ V G S = 10V

75N03L

Abstract: 75n03
Contextual Info: S DP /B 75N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 7 @ V G S = 10V

85N03

Abstract: 85N03L
Contextual Info: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V

biss 0001

Abstract: NDH832P 006CI
Contextual Info: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

1030-1090MHz

Abstract: 4884 SM200 DS01A
Contextual Info: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bbS3T31 0014507 S ■ PowerMOS transistor ~~ BUZ74 T -3^- 11 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IRF720

Abstract: IRF722 BRF721 IRF721 IRF723
Contextual Info: -Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V rDs on = 1.8 0 and 2.5 O F e a tu re s: