MMPQ Search Results

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

Contextual Info: M u ltip le B ip o la r T ra n s is to rs — Q u a d .% Davtee Type <v> Mtn MMPQ6502 BOTH 30 V CE SAT % Cob PF M fr ' mA MHz Min Max 0 .5 100 150 200 8 0 .4 10 150 CD7 S O IC -1 6 150 200 8 0 .4 10 150 CD3 T O -1 1 6 m volts d lc /lB & lc Max Configuralion

CBVK741B019

Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Contextual Info: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

MMPQ3725

Contextual Info: MOTOROLA Order this document by MMPQ3725/D SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MMPQ3725 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

Contextual Info: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Mem ory Driver Transistor MMPQ3467 PNP Silicon Motorola Preferred Device 1 CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO —40 Vdc VCB ^10 Vdc veb 5.0 Vdc 'C 1.0

MMPQ6842

Contextual Info: MOTOROLA Order this document by MMPQ6842/D SEMICONDUCTOR TECHNICAL DATA Quad MPU Clock Buffer Transistor NPN/PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 MMPQ6842 Voltage and current are negative for PNP transistors 16 1 CASE 751B–05, STYLE 4 SO–16

Contextual Info: E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Contextual Info: Central“ MMPQ2222A Semiconductor Corp. SURFACE MOUNT NPN SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.

p592

Contextual Info: Central" MMPQ6700 Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6700, consisting of two complementary pairs of transis­ tors, available in the SOIC-16 surface mount package, is designed for general purpose amplifi­

Contextual Info: MOTOROLA Order this document by MMPQ2907/D SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MMPQ2907 MMPQ2907A PNP Silicon Œ - rw —l EJ ä E -rv r-3 [7-1 T— iT sEt -—i j ^ ?pi] i . r v i. GŒ- MAXIMUM RATINGS Rating Collector-Em itter Voltage

p*502

Contextual Info: S E M I C O N D U C T O R ¡m MMPQ6502 SOIC-16 Quad NPN & PNP General Purpose Amplifier These com plim entary devices can be used in m edium power amplifiers, drivers and sw itches w ith co lle cto r currents to 500 mA. T hese devices are best used when space is the primary consideration. Sourced from Process 19 & 63. See PN2222A

PN2369A

Contextual Info: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .

Contextual Info: s e Mit“ a noi -intoa > FMB2907A MMPQ2907A E2 B2 C1 / MMPQ2907A C2 w pin#1 B1 E1 pin#1 B1 SC70-6 SuperSOT -6 M ark: .2F Mark: .2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose am plifier and switch requiring

Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc VEB 5.0 Vdc 500 mAdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous

SO16 footprint

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB

Contextual Info: ON Semiconductort Quad Amplifier/Switch Transistor MMPQ3904 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCB 60 Vdc Emitter–Base Voltage VEB 6.0 Vdc

model of 2n3906

Abstract: pr66 MMBT3906 2n3906 sot23 2N3906 MMBT3906 spice 2N3906 die 2n3906 equivalent 728p MMPQ3906
Contextual Info: 2N3906 MMBT3906 C E C B TO-92 SOT-23 E PZT3906 MMPQ3906 E B Mark: 2A B E SOIC-16 B E B E C B C C C C C C C C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced

MMPQ3467

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0

transistor mmpq3725 equivalent

Abstract: MMPQ3725
Contextual Info: ON Semiconductort Quad Core Driver Transistor MMPQ3725 ON Semiconductor Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEB 5.0 Vdc

Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to