MMIC C8 Search Results

AM011037WM-BM/FM-R

Abstract: amcomusa mmics
Contextual Info: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover

BGA2022

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Preliminary specification 2000 May 05 Philips Semiconductors Preliminary specification MMIC mixer BGA2022 PINNING FEATURES • Large frequency range: PIN DESCRIPTION – Cellular band 900 MHz

CGY2106TS

Abstract: Philips npo 0805 SSOP16 CGY21 CGY2106
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2106TS High dynamic range dual LNA MMIC Preliminary specification File under Integrated Circuits, IC17 2000 Aug 28 Philips Semiconductors Preliminary specification High dynamic range dual LNA MMIC CGY2106TS FEATURES GENERAL DESCRIPTION

BGA2022

Abstract: AN00059
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION

Decoupling capacitor philips

Abstract: CGY2105 CGY2105ATS DCS1800 PCS1900 SSOP16
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2105ATS High dynamic range dual LNA MMIC Product specification Supersedes data of 1999 December 23 File under Integrated Circuits, IC17 2000 Nov 22 Philips Semiconductors Product specification High dynamic range dual LNA MMIC

MARKING 5F SOT363

Abstract: BGA2022 AN00059
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2060025D

Contextual Info: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

x-Band Hemt Amplifier

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

GRM36

Abstract: HK1005 HK1608 NJG1714KC1 mix 3001
Contextual Info: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BGA2022 MMIC mixer Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 NXP Semiconductors Product specification MMIC mixer BGA2022 FEATURES PINNING • Large frequency range: PIN DESCRIPTION – Cellular band 900 MHz

diode p4b

Abstract: NJG1663K44
Contextual Info: NJG1663K44 X-SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1663K44 is a X Cross -SP4T* switch GaAs MMIC, which is suitable for switching of balanced bandpass filters. The NJG1663K44 features very low phase error between on-state paths, low insertion loss,

GRM39

Abstract: CRG16G HK1608 NJG1551F Murata GRM39
Contextual Info: NJG1551F 800MHz BAND MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1551F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. NJG1551F includes a mixer and a local amplifier, and ideally suitable for 800MHz band digital mobile

GRM36

Abstract: HK1005 HK1608 NJG1714KC1
Contextual Info: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

CRG16G

Abstract: GRM39 HK1608 NJG1551F Murata GRM39
Contextual Info: NJG1551F 800MHz BAND MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1551F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. NJG1551F includes a mixer and a local amplifier, and ideally suitable for 800MHz band digital mobile

Contextual Info: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

HP8566B

Abstract: signal generator 1900 mhz HP8665B HPMX-5001 HPMX5001 T4-1-X65
Contextual Info: HPMX-5001 Demonstration Circuit Board Application Brief 102 Introduction The circuit board described is designed for use with the HPMX-5001 up/down converter MMIC. It allows testing the MMIC for 1900 MHz applications such as DECT, and 2.4 GHz applications

FFP16

Abstract: FFP16-C1 GRM36 HK1005 NJG1312PC1
Contextual Info: NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted.

Contextual Info: NJG1663K44 X-SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1663K44 is a X Cross -SP4T* switch GaAs MMIC, which is suitable for switching of balanced bandpass filters. The NJG1663K44 features very low phase error between on-state paths, low insertion loss,