MMICS Search Results

Xa2 TRANSISTOR

Abstract: SXH-189 AN023
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

GN02018B

Contextual Info: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply

GN01037B

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn

BTS antenna structure

Abstract: hmc192 HMC18214 hittite cross HMC187MS8 HMC165S14 HMC172QS24 HMC173MS8 HMC175MS8 HMC183QS24
Contextual Info: MICROWAVE CORPORATION GaAs MMICs FOR CHANGING BASESTATION REQUIREMENTS FEBRUARY 2000 GAAS MMICS FOR CHANGING BASE STATION REQUIREMENTS oday wireless infrastructure designers are being faced with increasingly challenging requirements. Cellular base transceiver stations BTS , or base station, are becoming smaller,

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

soldering-iron

Abstract: 2M45-1505-L-TIC
Contextual Info: EXCELICS SEMICONDUCTOR, INC. DEVICE HANDLING RECOMMENDATIONS GaAs FETs and MMICs are “Class 1” devices in terms of Electrostatic Discharge ESD sensitivity, by DOD-STD-1886 definition. Handling these devices must at all times be done with ESD precautions. It is very important that the work

Contextual Info: Product Description SXT Series Stanford Microdevices’ SXT Series are high performance GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic packages. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and

XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Sirenza amplifier SOT-89 Marking

Abstract: .XA2
Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

XA2 MMIC

Abstract: Xa2 TRANSISTOR
Contextual Info: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

transistor 20 dB 2400 mhz

Contextual Info: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

a3909

Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

GN02039B

Abstract: GN01087B GN01154B 2.4 GHz driver amplifier SW SPDT GN01081B GN01096B GN01105B GN01106B GN01121B
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • GaAs MMICs ● GaAs MMICs for Mobile Communication Use Block LowNoise Amp. Part No. Antenna Switch RF Characteristics typ. Applications GN01087B Single-chip front end VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz CG: 20 dB NF: 4.0 dB

P09N02

Contextual Info: v03.0207 QUALITY & RELIABILITY QUALITY ASSURANCE Standard Process for Packaged MMICs C8, G7, G8, G16, LC3B, LC4, LC5, LH5, LH250, LM1, LM3, LM3B, P7 Packages Pick Die from Qualified Wafers 100 % Visual Inspect Kit and Record Lot Numbers Clean Package Die Attach/Epoxy Cure

Contextual Info: MMICs GN1042 GN 1042 Tentative GaAs N Channel 1C RF Package Dimensions For UHF/VHD band wide bandwidth low-noise RF amplification U nit ! mm •Features 2.8-0;j •Excellent secondary distortion characteristics •A MINI type package (4-pin) version o f GN1041

Contextual Info: Panasonic GaAs MMICs GN05008N GaAs 1C Unit : mm For PHS transmitting front-end amplifier Other communication equipment • Features • Low consumption current Idmax. 180mA • Small surface-mounting package • Built-in matching circuit between stages 1

Contextual Info: Panasonic GaAs MMICs GN1042 GaAs N-Channel MES IC Unit : mm For VHF/UHF wide-band low-noise RF-amplificaiton • Features • Superior in 2nd harmonics distortion • Automatic mounting is possible with emboss taping. Absolute Maximum Ratings Parameter Power supply voltage

Contextual Info: Panasonic GaAs MMICs GN1051 GaAs N-Channel IC For distributing amplifier • Features • With input-side matching-circuit • Low consumption current typ 3.6mA • Good reverse isolation (separation) ■ Absolute Maximum Ratings (Ta = 25°C) Param eter

Contextual Info: Panasonic GaAs MMICs GN01071B GaAs IC with b u ilt-in fe rro e le ctric L o w -n o is e a m p lifie r fo r C D M A • Features 0 Gain control amplifier for 1.5GHz 0 Low consumption current ■ A b s o lu te M a xim u m R atings (Ta = 25°C) P aram eter

F1313

Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Contextual Info: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp

Contextual Info: ALPHA IN»/ S E M I C O N D U C T O bME D • 05flS4M3 OOOlñflñ 1«J3 ■ ALP . MMICs Diversity Switches in SOIC Packages

Contextual Info: GaAs MMICs GN01064B GaAs IC with built-in ferroelectric Variable gain amplifier for a cellular phone unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc ue e/ d 6 0.5 –0.05 ● Low distortion characteristics

Contextual Info: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc ue e/ d 6 0.5 –0.05 ● Wide band mixer