diode mv2105
Abstract: marking 4U diode On Semiconductor Silicon Tuning MMBV2109LT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2104
Contextual Info: Silicon Tuning Diode MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning
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mmbv2101lt1mmbv2103lt1mmbv2105lt1mmbv2107lt1+10mmbv2108lt1mmbv2109lt18-100p236abmmbv2101lt1/mv2101mmbv2109lt1/mv2109diode mv2105marking 4u diodeon semiconductor silicon tuning mmbv2109lt1mv2104
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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MV2105
Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state
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mmbv2101lt1mv2105mv2101mv2109+3lv2209mmbv2101lt1/dmmbv2108lt1g
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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m1ma151at1m1ma151kt1m1ma152at1m1ma152kt1+16m1ma151wat1m1ma151wkt1m1ma152wat1m1ma152wkt1bas16wt1m1ma141kt12n3906 darlington transistorbc337mps5172 "cross-referencelow noise transistors bc638transistor mpf102low noise bc638sot-346 431bc237bc307bc212
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MV2104
Abstract: MV2101 MV2111 MV2115 MV2105 MMBV2109
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability
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mmbv2101lt1mmbv2103lt1mmbv2105lt1mmbv2107lt1+10mmbv2108lt1mmbv2109lt1mv2101mv2104mv2106mv2108mv2111mv2115mv2105mmbv2109
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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od-80od123/323ot-23ot346+16ot-323ot-416ot-223ot-89ot-143ot-363smd code booktransistor smd p1fmarking code w16 smd transistortransistor smd marking code jgsmd transistor ww1transistor smd a7sdiode smd l4wsmd diode zener code pj 78smd transistor wv4motorola transistor smd marking codes
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mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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sg388/dmay-2002r14525sg388+10mps2112uc3842 smps design with tl431mps2111dc motor speed control tl494transistor mps2112ic equivalent book ncp1203mosfet triggering circuit using tl494smps with uc3842 and tl431sg3526tip122 tip127 mosfet audio amp
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V2101
Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
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mmbv2101lt1/dot-23mmbv2101lt1mmbv2103lt1+10mmbv2105lt1mmbv2107lt1mmbv2108lt1mmbv2109lt1mv2101v2104v2101diode mv2105sot23 package diodesmv2105* equivalent
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Zener SOT23 C8 Marking
Abstract: DIODE M4A
Contextual Info: SOT-23 DIODES continued TVS (for ESD protection) Peak Power Dissipation - 40 Watts @ 1 ms Surge - MMBZ15VDLT1 Breakdown Voltage Min Nom Max @ IT (mA) V rwm (Volts) Irw m Ir s m V rsm Ir (iA ) (Amps) (Volts) Maximum Temperature Coefficient of V BR (mV/°C)
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ot-23mmbz15vdlt1mmbv105glt1mmbv109lt1+6mmbv409lt1mmbv809lt1mmbv3102lt1mmbv609lt1zener sot23 c8 markingdiode m4a
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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mmbd914lt1236abde218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640transistor mps5771bc237bfw4
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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pzta92t1261aaelectri218amsc1621t1+11msc2404msd1819amv1620mv1624mv1636mv1640p2d marking codeh2a transistorev 2816bc237transistor 2n2906
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2n5457226aamsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv16422n5457 motorola2n5457 equivalentbc237transistor 2n5457
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BC237
Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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bav99lt1236abj218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237jedec package to-226aa
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2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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sc-70/sot-323bav99wt1bav99lt1bav99rwt1+8msc1621t1msc2404msd1819amv1620mv16242n1613 equivalentbc237diode l 0607
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